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dc.rights.licenseopenen_US
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorIHDA, Ayoub Ait
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorDEVAL, Yann
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorLAPUYADE, Herve
IDREF: 120393336
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorRIVET, François
dc.contributor.authorGASTALDI, Matthieu
dc.contributor.authorROCHETTE, Stephane
dc.date.accessioned2024-05-21T07:26:42Z
dc.date.available2024-05-21T07:26:42Z
dc.date.issued2022-10
dc.date.conference2022-10-24
dc.identifier.issn2473-2001en_US
dc.identifier.urihttps://oskar-bordeaux.fr/handle/20.500.12278/199941
dc.description.abstractEnThis paper presents a 40 GHz varactor-less class-C VCO with long-term reliability. The class-C mode is achieved by a transformer magnetic feedback loop and a control circuit that lowers the bias gate voltage of the VCO's cross-pair transistors. The tail current source is removed from the VCO, ensuring a high voltage swing in addition to the high efficiency of class-C VCO. The design benefits from the body-biasing offered by the FD-SOI technology to fine-tune the frequency with the parasitic capacitance of the transistors. Thus, low-quality factor varactors at mm-wave frequencies are avoided. The capacitor bank is placed inside the transformer to reduce the parasitic inductance due to lead wires and the silicon footprint. The circuit reliability is improved by using a cascode structure in the active device to mitigate the hot-carriers generation. A capacitive feedback loop added to the active device boosts the transconductance. The VCO was implemented in 28 nm FD-SOI technology and covers the frequency between 35.58 GHz and 42.36 GHz (tuning range of 17.1%). The measured phase noise is −88.33 dBc/Hz at 1 MHz offset from a 35.58 GHz carrier with a power consumption of 7.3 mW under 1 V supply voltage. The resulting FoM and FoMT are 170.72 dBc/Hz and 175.38 dBc/Hz, respectively.
dc.language.isoENen_US
dc.subjectVaractors
dc.subjectFeedback loop
dc.subjectVoltage measurement
dc.subjectVoltage-controlled oscillators
dc.subjectWires
dc.subjectTransformers
dc.subjectTransistors
dc.subjectClass-C
dc.subjectBody-biasing
dc.subjectFD-SOI
dc.subjectReliability
dc.subjectMillimeter-wave oscillators
dc.subjectTransformer
dc.subjectVaractor-less oscillator
dc.title.enA 40 GHz Varactor-less Class-C VCO with 17.1% Tuning Range and Long-Term Reliability in 28nm FD-SOI for Satellite Communications
dc.typeCommunication dans un congrèsen_US
dc.identifier.doi10.1109/ICECS202256217.2022.9970988en_US
dc.subject.halSciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectroniqueen_US
bordeaux.page1-4en_US
bordeaux.hal.laboratoriesIMS : Laboratoire de l'Intégration du Matériau au Système - UMR 5218en_US
bordeaux.institutionUniversité de Bordeauxen_US
bordeaux.institutionBordeaux INPen_US
bordeaux.institutionCNRSen_US
bordeaux.conference.title2022 29th IEEE International Conference on Electronics, Circuits and Systems (ICECS)en_US
bordeaux.countrygben_US
bordeaux.title.proceeding2022 29th IEEE International Conference on Electronics, Circuits and Systems (ICECS)en_US
bordeaux.teamCIRCUIT DESIGN-CASen_US
bordeaux.conference.cityGlasgowen_US
hal.invitedouien_US
hal.proceedingsouien_US
hal.conference.end2022-10-26
hal.popularnonen_US
hal.audienceInternationaleen_US
hal.exportfalse
dc.rights.ccPas de Licence CCen_US
bordeaux.COinSctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.date=2022-10&rft.spage=1-4&rft.epage=1-4&rft.eissn=2473-2001&rft.issn=2473-2001&rft.au=IHDA,%20Ayoub%20Ait&DEVAL,%20Yann&LAPUYADE,%20Herve&RIVET,%20Fran%C3%A7ois&GASTALDI,%20Matthieu&rft.genre=unknown


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