Mostrar el registro sencillo del ítem

dc.rights.licenseopenen_US
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
hal.structure.identifierSTMicroelectronics
dc.contributor.authorDUMONT, Romane
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorMATOS, Magali De
hal.structure.identifierSTMicroelectronics
dc.contributor.authorCATHELIN, Andreia
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorDEVAL, Yann
dc.date.accessioned2024-04-02T10:32:25Z
dc.date.available2024-04-02T10:32:25Z
dc.date.issued2021-06-13
dc.date.conference2021-06-13
dc.identifier.issn2473-2001en_US
dc.identifier.urioai:crossref.org:10.1109/newcas50681.2021.9462758
dc.identifier.urihttps://oskar-bordeaux.fr/handle/20.500.12278/189124
dc.description.abstractA low-phase-noise injection-locked oscillator (ILO) based on a cross-coupled oscillator topology is presented. The prototype ILO was designed and fabricated in a 65-nm Partially Depleted SOI (PD-SOI) CMOS technology from STMicroelectronics. The 27.47 GHz free-running oscillator exhibits a phase noise of -119.23 dBc/Hz at 10-MHz offset, and its robustness to process variations is less than 4 dB. Using a common mode injection, the proposed ILO generates an output frequency at 27.5-GHz when the oscillator is injection-locked by the 5th harmonic of a 5.5 GHz reference. In injection-locked mode, the phase noise performance is then -116.75 dBc/Hz and - 135 dBc/Hz at 1-MHz and 10-MHz offsets, respectively, while solely consuming 2.06 mW from a 1 V supply. The total active area is 0.031 mm 2 (excluding I/O pads).
dc.language.isoENen_US
dc.publisherIEEEen_US
dc.sourcecrossref
dc.subjectPhase noise
dc.subjectLocal oscillators
dc.subjectPower demand
dc.subjectInjection-locked oscillators
dc.subjectConferences
dc.subjectPrototypes
dc.subjectCMOS technology
dc.subjectPD-SOI CMOS
dc.subjectFifth-generation (5G)
dc.subjectInjection-locked oscillator (ILO)
dc.subjectMillimeter-wave (mm-wave)
dc.title.enA Low-Noise mm-Wave Injection-Locked Oscillator designed in 65nm Partially Depleted SOI CMOS Technology
dc.typeCommunication dans un congrèsen_US
dc.identifier.doi10.1109/newcas50681.2021.9462758en_US
dc.subject.halSciences de l'ingénieur [physics]en_US
bordeaux.page1-4en_US
bordeaux.hal.laboratoriesIMS : Laboratoire de l'Intégration du Matériau au Système - UMR 5218en_US
bordeaux.institutionUniversité de Bordeauxen_US
bordeaux.institutionBordeaux INPen_US
bordeaux.institutionCNRSen_US
bordeaux.conference.title19th IEEE International New Circuits and Systems Conference (NEWCAS)en_US
bordeaux.countryfren_US
bordeaux.title.proceeding2021 19th IEEE International New Circuits and Systems Conference (NEWCAS)en_US
bordeaux.teamCIRCUIT DESIGN-CSHen_US
bordeaux.teamCIRCUIT DESIGN-CASen_US
bordeaux.conference.cityToulonen_US
bordeaux.import.sourcedissemin
hal.identifierhal-04529198
hal.version1
hal.date.transferred2024-04-02T10:32:27Z
hal.invitedouien_US
hal.proceedingsouien_US
hal.conference.end2021-06-16
hal.popularnonen_US
hal.audienceInternationaleen_US
hal.exporttrue
workflow.import.sourcedissemin
dc.rights.ccPas de Licence CCen_US
bordeaux.COinSctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.date=2021-06-13&rft.spage=1-4&rft.epage=1-4&rft.eissn=2473-2001&rft.issn=2473-2001&rft.au=DUMONT,%20Romane&MATOS,%20Magali%20De&CATHELIN,%20Andreia&DEVAL,%20Yann&rft.genre=unknown


Archivos en el ítem

ArchivosTamañoFormatoVer

No hay archivos asociados a este ítem.

Este ítem aparece en la(s) siguiente(s) colección(ones)

Mostrar el registro sencillo del ítem