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hal.structure.identifierDepartment of Electrical and Computer Engineering
hal.structure.identifierUniversity of Nebraska–Lincoln
dc.contributor.authorWU, Zhipeng
hal.structure.identifierDepartment of Electrical and Computer Engineering
hal.structure.identifierUniversity of Nebraska–Lincoln
dc.contributor.authorHUANG, Xi
hal.structure.identifierDepartment of Electrical and Computer Engineering
hal.structure.identifierUniversity of Nebraska–Lincoln
dc.contributor.authorSUN, Wanting
hal.structure.identifierDepartment of Electrical and Computer Engineering
hal.structure.identifierUniversity of Nebraska–Lincoln
dc.contributor.authorDONG, Haoyu
hal.structure.identifierDepartment of Electrical and Computer Engineering
hal.structure.identifierUniversity of Nebraska–Lincoln
dc.contributor.authorMAO, Aofei
hal.structure.identifierUniversity of Nebraska–Lincoln
hal.structure.identifierDepartment of Mechanical and Materials Engineering
dc.contributor.authorCUI, Bai
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
hal.structure.identifierDepartment of Electrical and Computer Engineering
dc.contributor.authorSILVAIN, Jean-François
hal.structure.identifierDepartment of mechanical and industrial engineering University of Iowa
dc.contributor.authorWANG, Xinwei
hal.structure.identifierDepartment of Electrical and Computer Engineering
hal.structure.identifierUniversity of Nebraska–Lincoln
dc.contributor.authorLU, Yongfeng
dc.date.issued2024
dc.identifier.issn0169-4332
dc.description.abstractEnSurface drying plays a critical role in wafer fabrication in microelectronics, primarily on eliminating watermarks. Spin drying, isopropanol alcohol (IPA) drying, and Marangoni drying are the most commonly used methods, but they have drawbacks such as high risk of water stains, safety hazards, environmental concerns, and energy inefficiency. Hence, there is a continuous demand for fast, efficient, chemical-free, and energy-efficient wafer drying processes. This study explored the use of nanosecond (ns) laser pulses for laser-induced sub-surface evaporation as a promising alternative for surface drying. By adjusting the laser fluence, clean and dry silicon (Si) substrates can be obtained without any stain or damage. Large-area laser drying was also demonstrated. Time-resolved imaging was employed to investigate the drying dynamics after the interaction between the laser pulses and the substrates. It was observed that the deposited water droplet films expand, detach from the substrates, and eject into the air after excimer laser pulses. Moreover, the study examined the influence of substrate conditions on laser drying, including surface roughness and hydrophilicity. The effectiveness of laser drying was evaluated on various substrates, including stainless steels (polished/mirror polished) and glasses. Pulsed lasers demonstrate the ability to dry chemical solutions, such as 35 g/L NaCl, in addition to pure water. These findings show the potential of using ns pulsed lasers as a versatile and environmentally friendly drying tool for various solution and substrate types.
dc.language.isoen
dc.publisherElsevier
dc.title.enTime-resolved imaging of microscale dynamics in laser drying of silicon wafers
dc.typeArticle de revue
dc.identifier.doi10.1016/j.apsusc.2023.158844
dc.subject.halChimie/Matériaux
bordeaux.journalApplied Surface Science
bordeaux.page158844
bordeaux.volume645
bordeaux.peerReviewedoui
hal.identifierhal-04329969
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-04329969v1
bordeaux.COinSctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Applied%20Surface%20Science&rft.date=2024&rft.volume=645&rft.spage=158844&rft.epage=158844&rft.eissn=0169-4332&rft.issn=0169-4332&rft.au=WU,%20Zhipeng&HUANG,%20Xi&SUN,%20Wanting&DONG,%20Haoyu&MAO,%20Aofei&rft.genre=article


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