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hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorMARTIN, Etienne
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorCHUNG, U-Chan
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorDUTTINE, Mathieu
hal.structure.identifierInstitut des Sciences Moléculaires [ISM]
dc.contributor.authorDOURGES, Marie Anne
hal.structure.identifierInstitut des Sciences Moléculaires [ISM]
dc.contributor.authorCLERMONT, Guillaume
hal.structure.identifierPlateforme Aquitaine de Caractérisation des Matériaux [PLACAMAT]
dc.contributor.authorLABRUGÈRE-SARROSTE, Christine
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorFOURCADE, Sébastien
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorMICHAU, Dominique
hal.structure.identifierCentre interuniversitaire de recherche et d'ingénierie des matériaux [CIRIMAT]
dc.contributor.authorESTOURNÈS, Claude
hal.structure.identifierCentre interuniversitaire de recherche et d'ingénierie des matériaux [CIRIMAT]
dc.contributor.authorHÉRISSON DE BEAUVOIR, Thomas
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorMAUVY, Fabrice
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorJUBERA, Veronique
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorMAGLIONE, Mario
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorGOGLIO, Graziella
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorELISSALDE, Catherine
dc.date.issued2024
dc.identifier.issn2666-5395
dc.description.abstractEnIn-depth control of reactivity and defects chemistry is shown to be mandatory to reach high density YSZ ceramics at sintering temperatures lower than 900°C. The combination of Cold Sintering Process (CSP) and Spark Plasma Sintering (SPS) has highlighted the role of transient chemistry on the densification of this material. More, optimised conditions were found for achieving densification of YSZ at 850°C in a one-step SPS process. In particular, the vacuum level in the SPS chamber is clearly shown to be a decisive parameter to obtain dense nanostructured YSZ tetragonal ceramics up to 95% below 900°C. The occurrence of oxygen vacancies has thus been addressed associating thermal analyses, X-ray photoelectron spectroscopy, Electron Paramagnetic Resonance, photoluminescence spectroscopy and impedance spectroscopy. Understanding defect chemistry mechanisms and their dependence on the process or combination of processes, is a lever towards high-quality YSZ nanostructured ceramics below 900°C.
dc.language.isoen
dc.publisherElsevier
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/
dc.subject.enyttria stabilized zirconia
dc.subject.enSpark Plasma Sintering
dc.subject.enDefect chemistry
dc.subject.enImpedance spectroscopy
dc.title.enDefect chemistry to trigger zirconia densification at low temperatures by Spark Plasma Sintering
dc.typeArticle de revue
dc.identifier.doi10.1016/j.oceram.2023.100518
dc.subject.halChimie/Matériaux
dc.subject.halSciences de l'ingénieur [physics]/Plasmas
bordeaux.journalOpen Ceramics
bordeaux.page100518
bordeaux.volume17
bordeaux.peerReviewedoui
hal.identifierhal-04330033
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-04330033v1
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