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hal.structure.identifierLaboratoire Ondes et Matière d'Aquitaine [LOMA]
dc.contributor.authorDALSTEIN, Laetitia
hal.structure.identifierLaboratoire Ondes et Matière d'Aquitaine [LOMA]
dc.contributor.authorTONDUSSON, Marc
hal.structure.identifierLaboratoire Ondes et Matière d'Aquitaine [LOMA]
dc.contributor.authorDEGERT, Jérôme
hal.structure.identifierLaboratoire Ondes et Matière d'Aquitaine [LOMA]
dc.contributor.authorFREYSZ, Eric
dc.date.accessioned2023-11-20T16:46:48Z
dc.date.available2023-11-20T16:46:48Z
dc.date.conference2023-09-17
dc.identifier.urihttps://oskar-bordeaux.fr/handle/20.500.12278/185015
dc.description.abstractEnWe recorded the hyper-Raman spectra resulting from the interaction of picosecond visible and ultrashort THz pulses at the surface of (111) silicon wafer. It reveals the signature of the Si lattice phonon and SiO2 mode centered at ~610 cm -1 and ~1100 cm - 1 , respectively. This technique also evidences the growing of the SiO2 layer at the surface of the silicon wafer exposed to ambient air
dc.language.isoen
dc.subject.enSpectroscopy at an interface
dc.subject.enSpectroscopy THz
dc.subject.enSilicon
dc.title.enTHz-near IR hyper-Raman surface spectroscopy of silicon wafer surface
dc.typeCommunication dans un congrès
dc.subject.halPhysique [physics]/Physique [physics]/Optique [physics.optics]
bordeaux.hal.laboratoriesLaboratoire Ondes et Matière d'Aquitaine (LOMA) - UMR 5798*
bordeaux.institutionUniversité de Bordeaux
bordeaux.institutionCNRS
bordeaux.countryCA
bordeaux.conference.cityMontréal
hal.identifierhal-04186036
hal.version1
hal.proceedingsnon
hal.conference.organizerIRMMW-THz Society
hal.conference.end2023-09-22
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-04186036v1
bordeaux.COinSctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.au=DALSTEIN,%20Laetitia&TONDUSSON,%20Marc&DEGERT,%20J%C3%A9r%C3%B4me&FREYSZ,%20Eric&rft.genre=unknown


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