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dc.rights.licenseopenen_US
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorFERRER, Pierre
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorRIVET, Francois
IDREF: 135485576
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorLAPUYADE, Herve
IDREF: 120393336
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorDEVAL, Yann
dc.date.accessioned2023-11-14T09:26:08Z
dc.date.available2023-11-14T09:26:08Z
dc.date.issued2023-11-01
dc.identifier.issn2169-3536en_US
dc.identifier.urioai:crossref.org:10.1109/access.2023.3326530
dc.identifier.urihttps://oskar-bordeaux.fr/handle/20.500.12278/184749
dc.description.abstractEnThis paper presents the first Arbitrary Waveform Generator (AWG) based on Walsh’s theory for wideband radio frequency (RF) conversion. The architecture is dedicated to 5G-FR1 applications (sub-6GHz) to perform a direct and large bandwidth conversion while achieving the highest energy efficiency. The circuit generates Walsh sequences weighted by Walsh coefficients thanks to dedicated Digital-to-Analog Converters (DACs). It embeds an internal memory to feed the data to be converted for measurement purposes. The sum of the weighted Walsh sequences carries out RF signals made of intrinsically synchronous aggregated channels over a frequency range between 600 MHz and 4 GHz. A high-level simulation study is performed as well as transistor-level simulation including post-layout and Monte-Carlo analysis. The circuit is designed in 28nm FD-SOI CMOS technology from STMicroelectronics. The power consumption is 44 mW depicting an energy per bit of 0.34 pJ/bit, the lowest of the state of the art to the authors’ knowledge.
dc.language.isoENen_US
dc.rightsAttribution 3.0 United States*
dc.rights.urihttp://creativecommons.org/licenses/by/3.0/us/*
dc.sourcecrossref
dc.subjectTransistors
dc.subjectSignal generators
dc.subjectGenerators
dc.subjectRadio frequency
dc.subjectCMOS technology
dc.subject5G mobile communication
dc.subjectMatlab
dc.subject5G
dc.subjectBroadband
dc.subjectCarrier aggregation
dc.subjectHadamard
dc.subjectSub-6GHz
dc.subjectWalsh transform
dc.subjectWideband
dc.subjectRF DAC
dc.subjectFrequency interleaving
dc.title.enA Walsh-Based Arbitrary Waveform Generator for 5G Applications in 28nm FD-SOI CMOS Technology
dc.typeArticle de revueen_US
dc.identifier.doi10.1109/access.2023.3326530en_US
dc.subject.halSciences de l'ingénieur [physics]en_US
bordeaux.journalIEEE Accessen_US
bordeaux.page117434-117442en_US
bordeaux.volume11en_US
bordeaux.institutionUniversité de Bordeauxen_US
bordeaux.institutionBordeaux INPen_US
bordeaux.institutionCNRSen_US
bordeaux.teamCIRCUIT DESIGNen_US
bordeaux.peerReviewedouien_US
bordeaux.inpressnonen_US
bordeaux.import.sourcedissemin
hal.identifierhal-04283929
hal.version1
hal.date.transferred2023-11-14T09:26:11Z
hal.popularnonen_US
hal.audienceInternationaleen_US
hal.exporttrue
workflow.import.sourcedissemin
dc.rights.ccCC BYen_US
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