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A 24.25-30.5GHz Fully Integrated SiGe Phase Shifter/VGA/Power Amplifier in 0.13μm BiCMOS Technology for 5G Beamforming Applications

dc.rights.licenseopenen_US
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorTOURISSAUD, Anais
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorKERHERVE, Eric
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorDELTIMPLE, Nathalie
IDREF: 102460280
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorVOISIN, Steeven
hal.structure.identifierUnited Monolithic Semiconductors [UMS]
dc.contributor.authorMATHIEU, Romain
dc.date.accessioned2023-10-03T09:36:05Z
dc.date.available2023-10-03T09:36:05Z
dc.date.conference2023-08-28
dc.identifier.urihttps://oskar-bordeaux.fr/handle/20.500.12278/183865
dc.description.abstractThis paper presents a 24.25GHz to 30.5GHz wideband SiGe front-end module including a passive phase shifter (PS), a low impedance and low phase variation variable gain amplifier (VGA) and a linear power amplifier (PA) dedicated to beamforming architectures. The whole chip exhibits 33dB of maximum gain, 24dBm of saturation power (Psat) and 32.5% of maximum Power Added Efficiency (PAEmax) at 27GHz. Phase adjustment covers 360° with a minimum resolution of 5.6° and gain covers a 16dB range by 0.5dB steps. The circuit is implemented in a SiGe 130nm BiCMOS process and occupies 0.53 mm² without pads.
dc.language.isoENen_US
dc.subjectSiGe
dc.subjectHBT
dc.subjectCurrent mirror
dc.subjectPhase shifter
dc.subjectVariable gain amplifier
dc.subjectPower amplifier
dc.subject5G
dc.subjectBeamforming
dc.title.enA 24.25-30.5GHz Fully Integrated SiGe Phase Shifter/VGA/Power Amplifier in 0.13μm BiCMOS Technology for 5G Beamforming Applications
dc.typeCommunication dans un congrèsen_US
dc.subject.halSciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectroniqueen_US
bordeaux.hal.laboratoriesIMS : Laboratoire de l'Intégration du Matériau au Système - UMR 5218en_US
bordeaux.institutionUniversité de Bordeauxen_US
bordeaux.institutionBordeaux INPen_US
bordeaux.institutionCNRSen_US
bordeaux.conference.title36th Symposium on Integrated and System Design, SBCCI2023en_US
bordeaux.countrybren_US
bordeaux.teamCONCEPTION-CSHen_US
bordeaux.conference.cityRio de Janeiroen_US
hal.identifierhal-04225986
hal.version1
hal.date.transferred2023-10-03T09:36:07Z
hal.invitedouien_US
hal.proceedingsouien_US
hal.conference.end2023-09-01
hal.popularnonen_US
hal.audienceInternationaleen_US
hal.exporttrue
dc.rights.ccPas de Licence CCen_US
bordeaux.COinSctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.au=TOURISSAUD,%20Anais&KERHERVE,%20Eric&DELTIMPLE,%20Nathalie&VOISIN,%20Steeven&MATHIEU,%20Romain&rft.genre=unknown


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