A Highly Compact 1W Ku-Band Power Amplifier
| dc.rights.license | open | en_US |
| hal.structure.identifier | Laboratoire de l'intégration, du matériau au système [IMS] | |
| dc.contributor.author | COQUILLAS, Benjamin | |
| hal.structure.identifier | Laboratoire de l'intégration, du matériau au système [IMS] | |
| dc.contributor.author | KERHERVE, Eric | |
| dc.contributor.author | AMIAUD, A.-C. | |
| dc.contributor.author | ROUSSEL, L. | |
| dc.contributor.author | REDOIS, S. | |
| dc.contributor.author | LOUIS, B. | |
| dc.contributor.author | MERLET, T. | |
| dc.contributor.author | PETIT, V. | |
| dc.date.accessioned | 2023-02-03T15:27:36Z | |
| dc.date.available | 2023-02-03T15:27:36Z | |
| dc.date.issued | 2022-06-08 | |
| dc.date.conference | 2022-03-01 | |
| dc.identifier.uri | https://oskar-bordeaux.fr/handle/20.500.12278/171864 | |
| dc.description.abstractEn | This paper presents a highly compact double-balanced two-stage Ku-Band SiGe power amplifier. Four power cells are combined in a balanced architecture which occupies less than 2mm 2 . As a proof of concept, the power amplifier was designed with a 0.13-μm SiGe BiCMOS technology. The simulated performances at 18GHz exhibit a saturated power higher than 30dBm up to 90°C, a linear gain of 21.2dB and a peak power added efficiency of 26.5%. | |
| dc.language.iso | EN | en_US |
| dc.publisher | IEEE | en_US |
| dc.subject.en | Circuits and systems | |
| dc.subject.en | Power amplifiers | |
| dc.subject.en | Couplers | |
| dc.subject.en | BiCMOS integrated circuits | |
| dc.subject.en | Hybrid power systems | |
| dc.subject.en | Integrated circuit modeling | |
| dc.subject.en | Gain | |
| dc.subject.en | Defense industry | |
| dc.subject.en | Design methodology | |
| dc.subject.en | Directional coupler | |
| dc.subject.en | Temperature simulation | |
| dc.title.en | A Highly Compact 1W Ku-Band Power Amplifier | |
| dc.type | Communication dans un congrès avec actes | en_US |
| dc.identifier.doi | 10.1109/LASCAS53948.2022.9789049 | en_US |
| dc.subject.hal | Sciences de l'ingénieur [physics]/Electronique | en_US |
| bordeaux.hal.laboratories | IMS : Laboratoire d’Intégration du Matériau au Système - UMR 5218 | en_US |
| bordeaux.institution | Université de Bordeaux | en_US |
| bordeaux.institution | Bordeaux INP | en_US |
| bordeaux.institution | CNRS | en_US |
| bordeaux.conference.title | 2022 IEEE 13th Latin America Symposium on Circuits and System (LASCAS) | en_US |
| bordeaux.country | cl | en_US |
| bordeaux.title.proceeding | 2022 IEEE 13th Latin America Symposium on Circuits and System (LASCAS) | en_US |
| bordeaux.conference.city | Puerto Varas | en_US |
| bordeaux.peerReviewed | oui | en_US |
| bordeaux.import.source | hal | |
| hal.identifier | hal-03714418 | |
| hal.version | 1 | |
| hal.export | false | |
| workflow.import.source | hal | |
| dc.rights.cc | Pas de Licence CC | en_US |
| bordeaux.COinS | ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.date=2022-06-08&rft.au=COQUILLAS,%20Benjamin&KERHERVE,%20Eric&AMIAUD,%20A.-C.&ROUSSEL,%20L.&REDOIS,%20S.&rft.genre=proceeding |
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