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Electro-thermal characterization of a differential temperature sensor in a 65 nm CMOS IC: Applications to gain monitoring in RF amplifiers

hal.structure.identifierElectronic Engineering Department
dc.contributor.authorALTET, Josep
hal.structure.identifierCommissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information [CEA-LETI]
dc.contributor.authorGONZALEZ, José Luis
hal.structure.identifierElectronic Engineering Department
dc.contributor.authorGOMEZ, Didac
hal.structure.identifierCentre Nacional de Microelectrònica [CNM]
dc.contributor.authorPERPIÑÀ, Xavier
hal.structure.identifierLaboratoire Ondes et Matière d'Aquitaine [LOMA]
dc.contributor.authorCLAEYS, Wilfrid
hal.structure.identifierLaboratoire Ondes et Matière d'Aquitaine [LOMA]
dc.contributor.authorGRAUBY, Stéphane
hal.structure.identifierElectronic Engineering Department
dc.contributor.authorDUFIS, Cedric
hal.structure.identifierCentre Nacional de Microelectrònica [CNM]
dc.contributor.authorVELLVEHI, Miquel
hal.structure.identifierElectronic Engineering Department
dc.contributor.authorMATEO, Diego
hal.structure.identifierElectronic Engineering Department
dc.contributor.authorREVERTER, Ferran
hal.structure.identifierLaboratoire Ondes et Matière d'Aquitaine [LOMA]
dc.contributor.authorDILHAIRE, Stefan
hal.structure.identifierCentre Nacional de Microelectrònica [CNM]
dc.contributor.authorJORDÀ, Xavier
dc.date.created2012-11-28
dc.date.issued2014-05
dc.identifier.issn0026-2692
dc.description.abstractEnThis paper reports on the design solutions and the different measurements we have done in order to characterize the thermal coupling and the performance of differential temperature sensors embedded in an integrated circuit implemented in a 65 nm CMOS technology. The on-chip temperature increases have been generated using diode-connected MOS transistors behaving as heat sources. Temperature measurements performed with the embedded sensor are corroborated with an infra-red camera and a laser interferometer used as thermometer. A 2 GHz linear power amplifier (PA) is as well embedded in the same silicon die. In this paper we show that temperature measurements performed with the embedded temperature sensor can be used to monitor the PA DC behavior and RF activity.
dc.language.isoen
dc.publisherElsevier
dc.subject.enCMOS integratedcircuits
dc.subject.enCMOS differential temperature sensors
dc.subject.enElectro-thermal characterization
dc.subject.enThermal coupling characterization
dc.subject.enIR camera measurements
dc.subject.enLaser interferometer measurements
dc.title.enElectro-thermal characterization of a differential temperature sensor in a 65 nm CMOS IC: Applications to gain monitoring in RF amplifiers
dc.typeArticle de revue
dc.identifier.doi10.1016/j.mejo.2014.02.009
dc.subject.halSciences de l'ingénieur [physics]/Electronique
bordeaux.journalMicroelectronics Journal
bordeaux.page484-490
bordeaux.volume45
bordeaux.issue5
bordeaux.peerReviewedoui
hal.identifierhal-01058582
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-01058582v1
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