LASER PROBING OF THERMAL-BEHAVIOR OF ELECTRONIC COMPONENTS AND ITS APPLICATION IN QUALITY AND RELIABILITY TESTING
| hal.structure.identifier | Centre de physique moléculaire optique et hertzienne [CPMOH] | |
| hal.structure.identifier | Laboratoire d'études de l'intégration des composants et systèmes électroniques [IXL] | |
| dc.contributor.author | CLAEYS, W. | |
| hal.structure.identifier | Centre de physique moléculaire optique et hertzienne [CPMOH] | |
| hal.structure.identifier | Laboratoire d'études de l'intégration des composants et systèmes électroniques [IXL] | |
| dc.contributor.author | DILHAIRE, S. | |
| hal.structure.identifier | Centre de physique moléculaire optique et hertzienne [CPMOH] | |
| hal.structure.identifier | Laboratoire d'études de l'intégration des composants et systèmes électroniques [IXL] | |
| dc.contributor.author | QUINTARD, V. | |
| dc.date.issued | 1994-03 | |
| dc.identifier.issn | 0167-9317 | |
| dc.description.abstractEn | We have developed two optical laser probes for the contactless characterisation of microelectronic components and ICs. The first is a high resolution interferometer for the measurement of dilatations, absolute values over 11 decades are obtained ranging from 10-3 to 10-14 m. The second is a reflectance probe for the absolute measurement of surface temperature variations upon ICs. The instrument is a thermometer for surface micrometric analysis able to measure temperature variation in the 10-3 to 500 °K range. The outstanding performances of these probes have been the starting point of the development of new investigation methods in the field of quality and reliability measurements. We show results of hot points detection upon integrated circuits with micrometric lateral resolution. We also present a method for homogeneity analysis of current density inside power MOS transistors. Finally we present a method for absolute temperature mapping upon metallic lines used in accelerated tests of current stress to study their reliability with regard to electromigration. | |
| dc.language.iso | en | |
| dc.publisher | Elsevier | |
| dc.title.en | LASER PROBING OF THERMAL-BEHAVIOR OF ELECTRONIC COMPONENTS AND ITS APPLICATION IN QUALITY AND RELIABILITY TESTING | |
| dc.type | Article de revue | |
| dc.identifier.doi | 10.1016/0167-9317(94)90093-0 | |
| dc.subject.hal | Physique [physics] | |
| bordeaux.journal | Microelectronic Engineering | |
| bordeaux.page | 411-420 | |
| bordeaux.volume | 24 | |
| bordeaux.issue | 1-4 | |
| bordeaux.peerReviewed | oui | |
| hal.identifier | hal-01549747 | |
| hal.version | 1 | |
| hal.popular | non | |
| hal.audience | Internationale | |
| hal.origin.link | https://hal.archives-ouvertes.fr//hal-01549747v1 | |
| bordeaux.COinS | ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Microelectronic%20Engineering&rft.date=1994-03&rft.volume=24&rft.issue=1-4&rft.spage=411-420&rft.epage=411-420&rft.eissn=0167-9317&rft.issn=0167-9317&rft.au=CLAEYS,%20W.&DILHAIRE,%20S.&QUINTARD,%20V.&rft.genre=article |
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