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hal.structure.identifierCentre de physique moléculaire optique et hertzienne [CPMOH]
dc.contributor.authorDILHAIRE, S.
hal.structure.identifierCentre de physique moléculaire optique et hertzienne [CPMOH]
dc.contributor.authorPHAN, T.
hal.structure.identifierCentre de physique moléculaire optique et hertzienne [CPMOH]
dc.contributor.authorSCHAUB, Emmanuel
hal.structure.identifierCentre de physique moléculaire optique et hertzienne [CPMOH]
dc.contributor.authorCLAEYS, W.
dc.date.issued1998-10
dc.identifier.issn0026-2714
dc.description.abstractEnWe present a new laser probe, a differential polarimetric interferometer, which is dedicated to the study of common failure mechanisms in microelectronic interconnects. Our investigation is mainly concentrated on the study of thermomechanical stress build-up and electromigration in metal lines. In the differential interferometer, two laser beams, separated by a few microns, are reflected from the surface of the device under test. Reflectance, phase and polarization changes between the two beams can be observed, this allows surface temperature and surface bending measurements together with the observation of stress induced in the silicon dioxide layer by Joule thermal expansion. The laser probe provides unique and useful information about local thermal effects due to electromigration. It also shows, for the first time to our knowledge, induced local stress effects due to the mismatch of thermal expansion coefficients of the metal, Si and SiO2 involved in running interconnect lines.
dc.language.isoen
dc.publisherElsevier
dc.title.enThermomechanical effects in metal lines on integrated circuits analysed with a differential polarimetric interferometer
dc.typeArticle de revue
dc.identifier.doi10.1016/s0026-2714(98)00033-x
dc.subject.halPhysique [physics]
bordeaux.journalMicroelectronics Reliability
bordeaux.page1591-1597
bordeaux.volume38
bordeaux.issue10
bordeaux.peerReviewedoui
hal.identifierhal-01550283
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-01550283v1
bordeaux.COinSctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Microelectronics%20Reliability&rft.date=1998-10&rft.volume=38&rft.issue=10&rft.spage=1591-1597&rft.epage=1591-1597&rft.eissn=0026-2714&rft.issn=0026-2714&rft.au=DILHAIRE,%20S.&PHAN,%20T.&SCHAUB,%20Emmanuel&CLAEYS,%20W.&rft.genre=article


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