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Laser Seebeck Effect Imaging (SEI) and Peltier Effect Imaging (PEI): complementary investigation methods

hal.structure.identifierCentre de physique moléculaire optique et hertzienne [CPMOH]
dc.contributor.authorDILHAIRE, S.
hal.structure.identifierCentre de physique moléculaire optique et hertzienne [CPMOH]
dc.contributor.authorSALHI, A.
hal.structure.identifierCentre de physique moléculaire optique et hertzienne [CPMOH]
dc.contributor.authorGRAUBY, Stéphane
hal.structure.identifierCentre de physique moléculaire optique et hertzienne [CPMOH]
dc.contributor.authorCLAEYS, W.
dc.date.issued2003-09
dc.identifier.issn0026-2714
dc.description.abstractEnWe present in this paper the comparison of two imaging techniques dedicated to the detection of faults in integrated circuits. These techniques are based on thermoelectric effects occurring when a laser beam heats junctions on integrated circuits or when current flows through the same junction. The first one called Seebeck Effect Imaging (SEI) consists in measuring the thermoelectric voltage appearing when a laser beam heats the circuit surface while in the second the laser is used to measure the Peltier temperature field induced by the current flow through thermoelectric junctions. We have compared these two complementary techniques based on reciprocal phenomena. We present a simple analytical model to explain the SEI and PEI signals and relate it to reliability analysis.
dc.language.isoen
dc.publisherElsevier
dc.title.enLaser Seebeck Effect Imaging (SEI) and Peltier Effect Imaging (PEI): complementary investigation methods
dc.typeArticle de revue
dc.identifier.doi10.1016/s0026-2714(03)00282-8
dc.subject.halPhysique [physics]
bordeaux.journalMicroelectronics Reliability
bordeaux.page1609-1613
bordeaux.volume43
bordeaux.issue9-11
bordeaux.peerReviewednon
hal.identifierhal-01550922
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-01550922v1
bordeaux.COinSctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Microelectronics%20Reliability&rft.date=2003-09&rft.volume=43&rft.issue=9-11&rft.spage=1609-1613&rft.epage=1609-1613&rft.eissn=0026-2714&rft.issn=0026-2714&rft.au=DILHAIRE,%20S.&SALHI,%20A.&GRAUBY,%20St%C3%A9phane&CLAEYS,%20W.&rft.genre=article


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