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High emission and detection efficiency of terahertz beam with heavy-ion-irradiated InP material excited at 0.8 mu m

hal.structure.identifierCentre de physique moléculaire optique et hertzienne [CPMOH]
dc.contributor.authorMOUNAIX, Patrick
hal.structure.identifierCentre de physique moléculaire optique et hertzienne [CPMOH]
dc.contributor.authorTONDUSSON, Marc
hal.structure.identifierInstitut d'électronique fondamentale [IEF]
dc.contributor.authorCHIMOT, Nicolas
hal.structure.identifierInstitut d'électronique fondamentale [IEF]
dc.contributor.authorMANGENEY, Juliette
hal.structure.identifierInstitut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
dc.contributor.authorBLARY, Karine
hal.structure.identifierInstitut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
dc.contributor.authorLAMPIN, Jean-Francois
dc.date.issued2006
dc.identifier.issn0013-5194
dc.description.abstractEnThe performance from a high-energy Br+-irradiated InP photoconductive antenna excited at 800 nm has been investigated. The ionic irradiation into InP reduces significantly the lifetime of photo-carriers in the substrate material down to 1.4 ps without the requirement of an epitaxial layer growth. THz emitter and detector efficiency are strongly dependent on irradiation doses. It was found that equivalent bandwidth and amplitude compared with LTG-GaAs switches excited at 800 nm under the same experimental conditions.
dc.language.isoen
dc.publisherIET
dc.title.enHigh emission and detection efficiency of terahertz beam with heavy-ion-irradiated InP material excited at 0.8 mu m
dc.typeArticle de revue
dc.identifier.doi10.1049/el:20061529
dc.subject.halPhysique [physics]
bordeaux.journalElectronics Letters
bordeaux.page879-880
bordeaux.volume42
bordeaux.issue15
bordeaux.peerReviewedoui
hal.identifierhal-01552875
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-01552875v1
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