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Ultrafast carrier response of Br+-irradiated In0.53Ga0.47As excited at telecommunication wavelengths

hal.structure.identifierInstitute of Physics
dc.contributor.authorFEKETE, L.
hal.structure.identifierInstitute of Physics
dc.contributor.authorNEMEC, H.
hal.structure.identifierInstitute of Physics
dc.contributor.authorMICS, Z.
hal.structure.identifierInstitute of Physics
dc.contributor.authorKADLEC, F.
hal.structure.identifierInstitute of Physics
dc.contributor.authorKUZEL, P.
hal.structure.identifierDepartment of Surfaces and Interfaces
dc.contributor.authorNOVAK, V.
hal.structure.identifierInstitute of Photonics and Electronics
hal.structure.identifierDepartment of Physics
dc.contributor.authorLORINCIK, J.
hal.structure.identifierInstitut d'électronique fondamentale [IEF]
dc.contributor.authorMARTIN, M.
hal.structure.identifierInstitut d'électronique fondamentale [IEF]
dc.contributor.authorMANGENEY, Juliette
hal.structure.identifierLaboratoire Ondes et Matière d'Aquitaine [LOMA]
dc.contributor.authorDELAGNES, Jean-Christophe
hal.structure.identifierLaboratoire Ondes et Matière d'Aquitaine [LOMA]
dc.contributor.authorMOUNAIX, Patrick
dc.date.created2011-12-07
dc.date.issued2012
dc.identifier.issn0021-8979
dc.description.abstractEnWe present results of infrared pump--terahertz probe experiments applied to a set of In0.53Ga0.47As films irradiated with heavy ions (Br+) at doses from 109 to 1012 cm−2. Photoexcitation at 1400 nm (0.89 eV) allowed us to characterize the response close to telecommunications' wavelengths whilst avoiding the intervalley carrier scattering observed when a shorter wavelength excitation is used. The excitation fluence was varied in our experiments in order to characterize the dynamics in detail: the lifetimes and mobilities of both electrons and holes were retrieved, and the trap filling and carrier diffusion were clearly observed. The In0.53Ga0.47As film irradiated by the dose of 1012 cm−2 exhibits simultaneously ultrashort electron lifetime (∼300 fs) and very high electron mobility (2800 cm2V−1s−1). These findings are particularly important for the design of terahertz emitters controlled by lasers operating at standard telecommunication wavelengths.
dc.language.isoen
dc.publisherAmerican Institute of Physics
dc.title.enUltrafast carrier response of Br+-irradiated In0.53Ga0.47As excited at telecommunication wavelengths
dc.typeArticle de revue
dc.identifier.doi10.1063/1.4709441
dc.subject.halPhysique [physics]/Physique [physics]/Optique [physics.optics]
bordeaux.journalJournal of Applied Physics
bordeaux.page093721
bordeaux.volume111
bordeaux.issue9
bordeaux.peerReviewedoui
hal.identifierhal-00696470
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-00696470v1
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