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hal.structure.identifierUniversité Mohammed V de Rabat [Agdal] [UM5]
dc.contributor.authorAIT TAMERD, M.
hal.structure.identifierUniversité Mohammed V de Rabat [Agdal] [UM5]
dc.contributor.authorABRAIME, B.
hal.structure.identifierCentre de physique moléculaire optique et hertzienne [CPMOH]
dc.contributor.authorKADIRI, A.
hal.structure.identifierLaboratoire de Physique de la Matière Condensée - UR UPJV 2081 [LPMC]
dc.contributor.authorLAHMAR, A.
hal.structure.identifierLaboratoire de Physique de la Matière Condensée - UR UPJV 2081 [LPMC]
dc.contributor.authorEL MARSSI, M.
hal.structure.identifierUniversité Mohammed V de Rabat [Agdal] [UM5]
dc.contributor.authorHAMEDOUN, M.
hal.structure.identifierHassan II Academy of Sciences and Technology [[= Académie Hassan II des Sciences et Techiques]]
dc.contributor.authorBENYOUSSEF, A.
dc.contributor.authorKENZ, A.E.
dc.date.issued2021
dc.identifier.issn0304-8853
dc.description.abstractEnMagnetoelectric materials have received astonishing attention due to their great potential for nanotechnology and magnetoelectric applications. Herein, the ferroelectric, magnetic and magnetoelectric properties of multiferroic BiFeO3 (BFO) thin films have been carried out using Monte Carlo simulation investigations in the framework of the Heisenberg model. Exchange coupling interactions in magnetic and ferroelectric sublattices that correspond to the experimental critical temperature were estimated. Temperature dependence of the internal energy, specific heat, magnetization, electric polarization and their susceptibilities in BFO thin films have been systematically analyzed. Moreover, the effect of magnetoelectric coupling interaction Jme on M-H and P-H hysteresis loops and magnetoelectric voltage coefficient were studied. A large magnetoelectric voltage coefficient of 104 mV/(cm.Oe) was predicted in BFO thin films with 25% defects. Furthermore, the defect mechanism can be used to control the polarization switching by the magnetic field in BFO system. The obtained results highlight the large magnetoelectric effect in BFO multiferroic thin films for multifunctional magnetoelectric devices. \textcopyright 2021 Elsevier B.V.
dc.language.isoen
dc.publisherElsevier
dc.title.enPrediction of Magnetoelectric Properties of Defect BiFeO3 Thin Films Using Monte Carlo Simulations
dc.typeArticle de revue
dc.identifier.doi10.1016/j.jmmm.2021.168402
dc.subject.halPhysique [physics]/Matière Condensée [cond-mat]
bordeaux.journalJournal of Magnetism and Magnetic Materials
bordeaux.volume539
bordeaux.peerReviewedoui
hal.identifierhal-03688452
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-03688452v1
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