Influence of Generated Defects by Ar Implantation on the Thermoelectric Properties of ScN
| hal.structure.identifier | Physique des Défauts et de la Plasticité [Institut Pprime] [PDP] | |
| dc.contributor.author | BURCEA, Razvan | |
| hal.structure.identifier | Physique des Défauts et de la Plasticité [Institut Pprime] [PDP] | |
| dc.contributor.author | BARBOT, Jean-François | |
| hal.structure.identifier | Surface, Interfaces et MAtériaux sous Contrainte [Institut Pprime] [SIMAC] | |
| dc.contributor.author | RENAULT, Pierre-Olivier | |
| hal.structure.identifier | Institut Pprime [UPR 3346] [PPrime [Poitiers]] | |
| dc.contributor.author | EYIDI, Dominique | |
| hal.structure.identifier | Physique et Propriétés des Nanostructures [Institut Pprime] [PPNa] | |
| dc.contributor.author | GIRARDEAU, Thierry | |
| hal.structure.identifier | Institut Pprime [UPR 3346] [PPrime [Poitiers]] | |
| dc.contributor.author | MARTEAU, Marc | |
| hal.structure.identifier | GREMAN (matériaux, microélectronique, acoustique et nanotechnologies) [GREMAN] | |
| dc.contributor.author | GIOVANNELLI, Fabien | |
| hal.structure.identifier | Laboratoire Ondes et Matière d'Aquitaine [LOMA] | |
| dc.contributor.author | ZENJI, Ahmad | |
| hal.structure.identifier | Laboratoire Ondes et Matière d'Aquitaine [LOMA] | |
| dc.contributor.author | RAMPNOUX, Jean-Michel | |
| hal.structure.identifier | Laboratoire Ondes et Matière d'Aquitaine [LOMA] | |
| dc.contributor.author | DILHAIRE, Stefan | |
| dc.contributor.author | EKLUND, Per | |
| dc.contributor.author | LE FEBVRIER, Arnaud | |
| dc.date.issued | 2022-09-26 | |
| dc.identifier.issn | 2574-0962 | |
| dc.description.abstractEn | Nowadays, making thermoelectric materials more efficient in energy conversion is still a challenge. In this work, to reduce the thermal conductivity and thus improve the overall thermoelectric performances, point and extended defects were generated in epitaxial 111-ScN thin films by implantation using argon ions. The films were investigated by structural, optical, electrical, and thermoelectric characterization methods. The results demonstrated that argon implantation leads to the formation of stable defects (up to 750 K operating temperature). These were identified as interstitial-type defect clusters and argon vacancy complexes. The insertion of these specific defects induces acceptor-type deep levels in the band gap, yielding a reduction in the free-carrier mobility. With a reduced electrical conductivity, the irradiated sample exhibited a higher Seebeck coefficient while maintaining the power factor of the film. The thermal conductivity is strongly reduced from 12 to 3 W·m–1·K–1 at 300 K, showing the influence of defects in increasing phonon scattering. Subsequent high-temperature annealing at 1573 K leads to the progressive evolution of these defects: the initial clusters of interstitials evolved to the benefit of smaller clusters and the formation of bubbles. Thus, the number of free carriers, the resistivity, and the Seebeck coefficient are almost restored but the mobility of the carriers remains low and a 30% drop in thermal conductivity is still effective (ktotal ∼ 8.5 W·m–1·K–1). This study shows that control defect engineering with defects introduced by irradiation using noble gases in a thermoelectric coating can be an attractive method to enhance the figure of merit of thermoelectric materials. | |
| dc.description.sponsorship | Poitiers Graduate School on physico-chemical properties of INTerfaces for AeRonautic, Energy and Environment - ANR-18-EURE-0010 | |
| dc.description.sponsorship | Interactions and transfers at fluids and solids interfaces - ANR-11-LABX-0017 | |
| dc.description.sponsorship | Capteur spectral de phonons superdiffusifs - ANR-18-CE42-0006 | |
| dc.language.iso | en | |
| dc.publisher | ACS | |
| dc.subject.en | Phonon scattering | |
| dc.subject.en | Nitride | |
| dc.subject.en | Thermoelectric | |
| dc.subject.en | Ion implantation | |
| dc.subject.en | Defects | |
| dc.title.en | Influence of Generated Defects by Ar Implantation on the Thermoelectric Properties of ScN | |
| dc.type | Article de revue | |
| dc.identifier.doi | 10.1021/acsaem.2c01672 | |
| dc.subject.hal | Physique [physics] | |
| dc.identifier.arxiv | 2203.13227 | |
| bordeaux.journal | ACS Applied Energy Materials | |
| bordeaux.page | 11025-11033 | |
| bordeaux.volume | 5 | |
| bordeaux.issue | 9 | |
| bordeaux.peerReviewed | oui | |
| hal.identifier | hal-03810977 | |
| hal.version | 1 | |
| hal.popular | non | |
| hal.audience | Internationale | |
| hal.origin.link | https://hal.archives-ouvertes.fr//hal-03810977v1 | |
| bordeaux.COinS | ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=ACS%20Applied%20Energy%20Materials&rft.date=2022-09-26&rft.volume=5&rft.issue=9&rft.spage=11025-11033&rft.epage=11025-11033&rft.eissn=2574-0962&rft.issn=2574-0962&rft.au=BURCEA,%20Razvan&BARBOT,%20Jean-Fran%C3%A7ois&RENAULT,%20Pierre-Olivier&EYIDI,%20Dominique&GIRARDEAU,%20Thierry&rft.genre=article |
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