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Accurate electro-optical characterization of high power density GaAs-based laser diodes for screening strategies improvement

hal.structure.identifier3S Photonics
dc.contributor.authorDEL VECCHIO, Pamela
hal.structure.identifierLaboratoire Ondes et Matière d'Aquitaine [LOMA]
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorDESHAYES, Yannick
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorJOLY, Simon
hal.structure.identifier3S Photonics
dc.contributor.authorBETTIATI, Mauro
hal.structure.identifier3S Photonics
dc.contributor.authorLARUELLE, François
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorBECHOU, Laurent
dc.date.issued2014-05-02
dc.date.conference2014-04-14
dc.description.abstractEnIn this study, we report on a methodology based on reverse and forward current-voltage curves (I-V) and on Degree of Polarization (DoP) of electroluminescence measurements on 980 nm laser diodes chip-on-submount (CoS) for the improvement of screening tests. Current-voltage curves are performed at reverse bias up to breakdown voltage (VBR) using both a high current accuracy (< 1 pA) and high voltage resolution (< 10 mV) at different submount-temperatures (20-50°C). The DoP of luminescence of such devices, related to strains in materials and effect of shear strain on the birefringence, is calculated from the simultaneous measurement of TE (LTE) and TM (LTM) polarized light emissions. We observe that application of high reverse voltages occasionally produces significant micro-plasma (MP) pre-breakdown on reverse I-V characteristics as recently observed in InGaN/GaN LEDs and assumed to be a response of electrically active defects. Comparisons between breakdown voltages and number of MP, and changes of leakage current at low forward voltage (< 0.1 V) are considered. DoP measurements are also analyzed versus temperature. Finally the usefulness of these measurements for effective screening of devices is discussed.
dc.language.isoen
dc.source.titleAccurate electro-optical characterization of high power density GaAs-based laser diodes for screening strategies improvement
dc.title.enAccurate electro-optical characterization of high power density GaAs-based laser diodes for screening strategies improvement
dc.typeCommunication dans un congrès
dc.identifier.doi10.1117/12.2052179
dc.subject.halSciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique
dc.subject.halSciences de l'ingénieur [physics]/Optique / photonique
dc.subject.halPhysique [physics]/Physique [physics]/Optique [physics.optics]
bordeaux.page9134:913423
bordeaux.countryBE
bordeaux.title.proceedingAccurate electro-optical characterization of high power density GaAs-based laser diodes for screening strategies improvement
bordeaux.conference.cityBrussels
bordeaux.peerReviewedoui
hal.identifierhal-00991556
hal.version1
hal.invitednon
hal.proceedingsoui
hal.conference.end2014-04-17
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-00991556v1
bordeaux.COinSctx_ver=Z39.88-2004&amp;rft_val_fmt=info:ofi/fmt:kev:mtx:journal&amp;rft.btitle=Accurate%20electro-optical%20characterization%20of%20high%20power%20density%20GaAs-based%20laser%20diodes%20for%20screening%20strategies%20improvement&amp;rft.date=2014-05-02&amp;rft.spage=9134:913423&amp;rft.epage=9134:913423&amp;rft.au=DEL%20VECCHIO,%20Pamela&amp;DESHAYES,%20Yannick&amp;JOLY,%20Simon&amp;BETTIATI,%20Mauro&amp;LARUELLE,%20Fran%C3%A7ois&amp;rft.genre=unknown


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