Resistive hystersis effects in perovskite oxide-based heterostructure junctions
hal.structure.identifier | Laboratoire de cristallographie et sciences des matériaux [CRISMAT] | |
dc.contributor.author | SINGH, M. P. | |
hal.structure.identifier | Equipe Electronique - Laboratoire GREYC - UMR6072 | |
dc.contributor.author | MÉCHIN, Laurence | |
hal.structure.identifier | Laboratoire de cristallographie et sciences des matériaux [CRISMAT] | |
dc.contributor.author | PRELLIER, W. | |
hal.structure.identifier | Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB] | |
dc.contributor.author | MAGLIONE, Mario | |
dc.date.created | 2006 | |
dc.date.issued | 2006 | |
dc.identifier.issn | 0003-6951 | |
dc.description.abstractEn | In this paper, we report the electrical and structural properties of the oxide-based metal/ferroelectric/metal (MFM) junctions. The heterostructures are composed of ultrathin layers of La0.7Ca0.3MnO3 (LCMO) as a metallic layer and, BaTiO3 (BTO) as a ferroelectric layer. Junction based devices, having the dimensions of 400 x 200 micom2, have been fabricated upon LCMO/BTO/LCMO heterostructures by photolithography and Ar-ion milling technique. The DC current-voltage (I-V) characteristics of the MFM junctions were carried out. At 300 K, the devices showed the linear (I-V) characteristics, whereas at 77 K, (I-V) curves exhibited some reproducible switching behaviours with well-defined remnant currents. The resulting resistance modulation is very different from what was already reported in ultrathin ferroelectric layers displaying resistive switching. A model is presented to explain the datas | |
dc.language.iso | en | |
dc.publisher | American Institute of Physics | |
dc.title.en | Resistive hystersis effects in perovskite oxide-based heterostructure junctions | |
dc.type | Article de revue | |
dc.identifier.doi | 10.1063/1.2388145 | |
dc.subject.hal | Physique [physics]/Matière Condensée [cond-mat]/Autre [cond-mat.other] | |
dc.subject.hal | Sciences de l'ingénieur [physics]/Electronique | |
dc.identifier.arxiv | cond-mat/0610172 | |
bordeaux.journal | Applied Physics Letters | |
bordeaux.page | 202906 | |
bordeaux.volume | 89 | |
bordeaux.issue | 20 | |
bordeaux.peerReviewed | oui | |
hal.identifier | hal-00108179 | |
hal.version | 1 | |
hal.popular | non | |
hal.audience | Internationale | |
hal.origin.link | https://hal.archives-ouvertes.fr//hal-00108179v1 | |
bordeaux.COinS | ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Applied%20Physics%20Letters&rft.date=2006&rft.volume=89&rft.issue=20&rft.spage=202906&rft.epage=202906&rft.eissn=0003-6951&rft.issn=0003-6951&rft.au=SINGH,%20M.%20P.&M%C3%89CHIN,%20Laurence&PRELLIER,%20W.&MAGLIONE,%20Mario&rft.genre=article |
Fichier(s) constituant ce document
Fichiers | Taille | Format | Vue |
---|---|---|---|
Il n'y a pas de fichiers associés à ce document. |