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Resistive hystersis effects in perovskite oxide-based heterostructure junctions

hal.structure.identifierLaboratoire de cristallographie et sciences des matériaux [CRISMAT]
dc.contributor.authorSINGH, M. P.
hal.structure.identifierEquipe Electronique - Laboratoire GREYC - UMR6072
dc.contributor.authorMÉCHIN, Laurence
hal.structure.identifierLaboratoire de cristallographie et sciences des matériaux [CRISMAT]
dc.contributor.authorPRELLIER, W.
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorMAGLIONE, Mario
dc.date.created2006
dc.date.issued2006
dc.identifier.issn0003-6951
dc.description.abstractEnIn this paper, we report the electrical and structural properties of the oxide-based metal/ferroelectric/metal (MFM) junctions. The heterostructures are composed of ultrathin layers of La0.7Ca0.3MnO3 (LCMO) as a metallic layer and, BaTiO3 (BTO) as a ferroelectric layer. Junction based devices, having the dimensions of 400 x 200 micom2, have been fabricated upon LCMO/BTO/LCMO heterostructures by photolithography and Ar-ion milling technique. The DC current-voltage (I-V) characteristics of the MFM junctions were carried out. At 300 K, the devices showed the linear (I-V) characteristics, whereas at 77 K, (I-V) curves exhibited some reproducible switching behaviours with well-defined remnant currents. The resulting resistance modulation is very different from what was already reported in ultrathin ferroelectric layers displaying resistive switching. A model is presented to explain the datas
dc.language.isoen
dc.publisherAmerican Institute of Physics
dc.title.enResistive hystersis effects in perovskite oxide-based heterostructure junctions
dc.typeArticle de revue
dc.identifier.doi10.1063/1.2388145
dc.subject.halPhysique [physics]/Matière Condensée [cond-mat]/Autre [cond-mat.other]
dc.subject.halSciences de l'ingénieur [physics]/Electronique
dc.identifier.arxivcond-mat/0610172
bordeaux.journalApplied Physics Letters
bordeaux.page202906
bordeaux.volume89
bordeaux.issue20
bordeaux.peerReviewedoui
hal.identifierhal-00108179
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-00108179v1
bordeaux.COinSctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Applied%20Physics%20Letters&rft.date=2006&rft.volume=89&rft.issue=20&rft.spage=202906&rft.epage=202906&rft.eissn=0003-6951&rft.issn=0003-6951&rft.au=SINGH,%20M.%20P.&M%C3%89CHIN,%20Laurence&PRELLIER,%20W.&MAGLIONE,%20Mario&rft.genre=article


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