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Piezoelectric and non-linear optical properties of α-quartz type Si1−xGexO2 single crystals

hal.structure.identifierInstitut Charles Gerhardt Montpellier - Institut de Chimie Moléculaire et des Matériaux de Montpellier [ICGM]
dc.contributor.authorCLAVIER, Damien
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorPRAKASAM, Mythili
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorLARGETEAU, Alain
hal.structure.identifierFranche-Comté Électronique Mécanique, Thermique et Optique - Sciences et Technologies (UMR 6174) [FEMTO-ST]
dc.contributor.authorBOY, Jean-Jacques
hal.structure.identifierLaboratoire Charles Coulomb [L2C]
dc.contributor.authorHEHLEN, Bernard
hal.structure.identifierInstitut Charles Gerhardt Montpellier - Institut de Chimie Moléculaire et des Matériaux de Montpellier [ICGM]
dc.contributor.authorCAMBON, Martine
hal.structure.identifierInstitut Charles Gerhardt Montpellier - Institut de Chimie Moléculaire et des Matériaux de Montpellier [ICGM]
dc.contributor.authorHERMET, Patrick
hal.structure.identifierInstitut Charles Gerhardt Montpellier - Institut de Chimie Moléculaire et des Matériaux de Montpellier [ICGM]
dc.contributor.authorHAINES, Julien
hal.structure.identifierInstitut Charles Gerhardt Montpellier - Institut de Chimie Moléculaire et des Matériaux de Montpellier [ICGM]
dc.contributor.authorCAMBON, Olivier
dc.date.issued2016
dc.description.abstractEnSingle crystals of α-quartz type Si1−xGexO2 with x < 0.2 were grown in 0.05 M NaOH solution. Infrared measurements confirmed that crystals grown at high pressure and high temperature have a low –OH group defect content. After a few millimeters of crystal growth under these conditions, α3500 reaches 0.1 cm−1 and no free –OH are present. The d11 value measured on an X-cut from the crystal with x = 0.0375 is 3.08 pC N−1 (±0.15), in good agreement with the value of 2.97 pC N−1 obtained using density functional theory based calculations. Piezoelectric measurements were performed on the Si1−xGexO2 crystal with x = 0.0375, both at room temperature and after annealing at various temperatures. The piezoelectric signal of the crystal with x = 0.0375 and pure SiO2 disappears after annealing at 635 °C and 545 °C, respectively. Nonlinear optical (NLO) properties of Si1−xGexO2 crystals were measured by Maker's fringe technique on Z-cut χ11(2) and their corresponding values for x = 0.023 and 0.028 are 1.3(2) pm V−1 and 1.6(2) pm V−1, respectively. These values are in good agreement with density functional theory based calculations. The light induced damage threshold values measured on Si1−xGexO2 crystals with x = 0.023 and 0.028 are very similar to that of α-quartz.
dc.language.isoen
dc.publisherRoyal Society of Chemistry
dc.title.enPiezoelectric and non-linear optical properties of α-quartz type Si1−xGexO2 single crystals
dc.typeArticle de revue
dc.identifier.doi10.1039/C5CE02477C
dc.subject.halChimie/Matériaux
bordeaux.journalCrystEngComm
bordeaux.page2500-2508
bordeaux.volume18
bordeaux.issue14
bordeaux.peerReviewedoui
hal.identifierhal-01307454
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-01307454v1
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