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hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorCHEVALIER, Bernard
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorPASTUREL, Mathieu
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorBOBET, Jean-Louis
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorDECOURT, Rodolphe
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorETOURNEAU, Jean
hal.structure.identifierLaboratoire de Cristallographie
dc.contributor.authorISNARD, Olivier
hal.structure.identifierDepartamento de ciencias de la tierra y física de la materia condensada [CITIMAC]
dc.contributor.authorSÁNCHEZ MARCOS, Jorge
hal.structure.identifierDepartamento de ciencias de la tierra y física de la materia condensada [CITIMAC]
dc.contributor.authorRODRÍGUEZ FERNÁNDEZ, Jesus
dc.date.issued2004
dc.identifier.issn0925-8388
dc.description.abstractEnThe hydrogenation process of the intermediate valence compounds CeNiAl, CeNiGa, CeNiIn, CeNiSi and CeNiGe and of the Kondo semiconductor stannide CeNiSn has been investigated. Magnetization and electrical resistivity measurements reveal interesting physical transition induced by the insertion of hydrogen : ....
dc.language.isoen
dc.publisherElsevier
dc.subject.enHydrogenation
dc.subject.enCerium compounds
dc.subject.enMagnetic transition
dc.title.enHydrogenation of the ternary compounds CeNiX (X=Al, Ga, In, Si, Ge and Sn): influence on the valence state of cerium
dc.typeArticle de revue
dc.identifier.doi10.1016/j.jallcom.2004.04.006
dc.subject.halChimie/Matériaux
bordeaux.journalJournal of Alloys and Compounds
bordeaux.page4-9
bordeaux.volume383
bordeaux.issue1-2
bordeaux.peerReviewedoui
hal.identifierhal-00153139
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-00153139v1
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