On the ordering in new low gap semiconductors: PtSnS, PtSnSe, PtSnTe. Experimental and DFT studies
hal.structure.identifier | Institut für Anorganische Chemie | |
dc.contributor.author | WEIHRICH, Richard | |
hal.structure.identifier | Institut für Anorganische Chemie | |
dc.contributor.author | KUROWSKI, Daniel | |
hal.structure.identifier | Institut für Anorganische Chemie | |
dc.contributor.author | STÜCKL, Andrea C. | |
hal.structure.identifier | Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB] | |
dc.contributor.author | MATAR, Samir F. | |
hal.structure.identifier | Institut für Anorganische Chemie | |
dc.contributor.author | RAU, Franz | |
hal.structure.identifier | Institut für Anorganische Chemie | |
dc.contributor.author | BERNERT, Thomas | |
dc.date.issued | 2004 | |
dc.identifier.issn | 0022-4596 | |
dc.description.abstractEn | The crystallographic and electronic structures of PtSnS, PtSnSe and PtSnTe were investigated by X-ray structure analysis and density functional theory (DFT) calculations. Conductivity measurements and diffraction patterns show semiconducting ordered pyrite type related compounds containing SnX (X=S, Se, Te) entities. A scheme is presented to model ordered variants according to the relative orientation of the XY dumbbells. .. | |
dc.language.iso | en | |
dc.publisher | Elsevier | |
dc.title.en | On the ordering in new low gap semiconductors: PtSnS, PtSnSe, PtSnTe. Experimental and DFT studies | |
dc.type | Article de revue | |
dc.identifier.doi | 10.1016/j.jssc.2004.03.031 | |
dc.subject.hal | Chimie/Matériaux | |
bordeaux.journal | Journal of Solid State Chemistry | |
bordeaux.page | 2591-2599 | |
bordeaux.volume | 177 | |
bordeaux.issue | 7 | |
bordeaux.peerReviewed | oui | |
hal.identifier | hal-00154469 | |
hal.version | 1 | |
hal.popular | non | |
hal.audience | Internationale | |
hal.origin.link | https://hal.archives-ouvertes.fr//hal-00154469v1 | |
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