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Modification of n-Si characteristics by annealing and cooling at different rates

hal.structure.identifierDepartment of Chemistry
dc.contributor.authorSALIH, Subhi K.
hal.structure.identifierDepartment of Chemistry
dc.contributor.authorHILAL, Hikmat S.
hal.structure.identifierDepartment of Chemistry
dc.contributor.authorSAADEDDIN, Iyad
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorSELLIER, Elisabeth
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorCAMPET, Guy
dc.date.issued2003
dc.identifier.issn0882-7516
dc.description.abstractEnhe effect of annealing of the n-Si semiconductor on its characteristics in photoelectrochemical systems has been investigated. The annealing improved the dark current density vs. potential plots. The surface was improved by annealing, as manifested by SEM results. The effect of the cooling rate on preheated n-Si wafers was also investigated. It was found that the slowly cooled electrodes gave better dark current density vs. potential plots, for samples annealed at lower than 550°C. For samples annealed at higher temperatures, quenching gave better dark-current density vs. potential plots. SEM measurements showed parallel results to these findings. Enhanced surface textures were observed for slowly cooled wafers from temperatures below 550°C. Samples quenched from temperatures above 550°C showed better surfaces than slowly cooled counterparts.
dc.language.isoen
dc.publisherHindawi Publishing Corporation
dc.title.enModification of n-Si characteristics by annealing and cooling at different rates
dc.typeArticle de revue
dc.identifier.doi10.1080/0882751031000116124
dc.subject.halChimie/Matériaux
bordeaux.journalActive and Passive Electronic Components
bordeaux.page213-230
bordeaux.volume26
bordeaux.issue4
bordeaux.peerReviewedoui
hal.identifierhal-00170366
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-00170366v1
bordeaux.COinSctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Active%20and%20Passive%20Electronic%20Components&rft.date=2003&rft.volume=26&rft.issue=4&rft.spage=213-230&rft.epage=213-230&rft.eissn=0882-7516&rft.issn=0882-7516&rft.au=SALIH,%20Subhi%20K.&HILAL,%20Hikmat%20S.&SAADEDDIN,%20Iyad&SELLIER,%20Elisabeth&CAMPET,%20Guy&rft.genre=article


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