Afficher la notice abrégée

hal.structure.identifierMaterials Research Centre
hal.structure.identifierLaboratory for Energy and Advanced Devices [LEAD]
dc.contributor.authorPERUMAL, Suresh
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorGORSSE, S.
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorAIL, Ujwala
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorPRAKASAM, Mythili
hal.structure.identifierMaterials Research Centre
hal.structure.identifierDepartment of Chemistry
dc.contributor.authorRAJASEKAR, P.
hal.structure.identifierMaterials Research Centre
dc.contributor.authorUMARJI, Arun
dc.date.issued2019-12
dc.identifier.issn1369-8001
dc.description.abstractEnHigher manganese silicide (HMS) is considered as a promising thermoelectric material at intermediate temperatures. Samples of Si-rich HMS were prepared by arc melting followed by ball milling combined with densification by an induction hot uni-axial pressing (HP) and spark plasma sintering (SPS), respectively. Powder X-ray diffraction, SEM and EPMA studies confirmed the presence of Si in HMS matrix. TEM micrographs on milled powders further confirmed the presence of Si particles with an average size of ~5–10 nm in HMS matrix. Microstructure investigations on densified samples revealed that SPS process seems to be a beneficial tool for embedding the nanostructures of Si (~20–50 nm) particles in HMS matrix. SPS also controls the grain growth of HMS during densification, which in turn reduces the total thermal conductivity from ~4.4 W/m.K to 2.10 W/m.K. On the other hand, samples processed by HP showed the value of ~2.44 W/m.K with similar sintering parameters as in SPS used for densification. Huge reduction in lattice thermal conductivity of about ~55%, and a considerable increase in Seebeck value was observed in Si-rich BMed HMS. However, reduction in electrical conductivity associated with insulating Si particles in HMS matrix limited the zT to ~0.26 at 725 K.
dc.language.isoen
dc.publisherElsevier
dc.subject.enThermoelectric properties
dc.subject.enMechanical alloying
dc.subject.enHigher manganese silicides
dc.subject.enSpark plasma sintering
dc.subject.enHot uni-axial pressing
dc.title.enEnhanced thermoelectric figure of merit in nano-structured Si dispersed higher manganese silicide
dc.typeArticle de revue
dc.identifier.doi10.1016/j.mssp.2019.104649
dc.subject.halChimie/Matériaux
bordeaux.journalMaterials Science in Semiconductor Processing
bordeaux.page104649 (9 p.)
bordeaux.volume104
bordeaux.peerReviewedoui
hal.identifierhal-02290455
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-02290455v1
bordeaux.COinSctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Materials%20Science%20in%20Semiconductor%20Processing&rft.date=2019-12&rft.volume=104&rft.spage=104649%20(9%20p.)&rft.epage=104649%20(9%20p.)&rft.eissn=1369-8001&rft.issn=1369-8001&rft.au=PERUMAL,%20Suresh&GORSSE,%20S.&AIL,%20Ujwala&PRAKASAM,%20Mythili&RAJASEKAR,%20P.&rft.genre=article


Fichier(s) constituant ce document

FichiersTailleFormatVue

Il n'y a pas de fichiers associés à ce document.

Ce document figure dans la(les) collection(s) suivante(s)

Afficher la notice abrégée