Barrier height at (Ba,Sr)TiO3/Pt interfaces studied by photoemission
hal.structure.identifier | Institute of Materials Science | |
dc.contributor.author | SCHAFRANEK, R. | |
hal.structure.identifier | Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB] | |
dc.contributor.author | PAYAN, Sandrine | |
hal.structure.identifier | Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB] | |
dc.contributor.author | MAGLIONE, Mario | |
hal.structure.identifier | Institute of Materials Science | |
dc.contributor.author | KLEIN, Andréas | |
dc.date.issued | 2008 | |
dc.identifier.issn | 1098-0121 | |
dc.description.abstractEn | The interface formation of Nb-doped SrTiO3 single crystals and (Ba,Sr)TiO3 thin films with Pt has been studied by using photoelectron spectroscopy with in situ sample preparation. For the single crystal sample, a Schottky barrier height for electrons of 0.5–0.6 eV is determined after deposition of Pt in vacuum environment. After annealing in 0.05 Pa oxygen pressure, a strong increase in the barrier height to >=1.2 eV is observed. X-ray induced photovoltages of up to 0.7 eV are observed in this case and have to be taken into account for a proper determination of the barrier height. A subsequent annealing in vacuum reduces the barrier again. Hence, the barrier height can be reversibly switched between an oxidized state with a large barrier height and a reduced state with a low barrier height. Quantitative analysis of the barrier heights indicates that the changes are related to the changes of interfacial defect concentration. Due to the occurrence of a Ti3+ related signal, the defects are identified as oxygen vacancies. The same effects are observed at interfaces between Pt and (Ba,Sr)TiO3 thin films with a smaller absolute value of the barrier height in the oxidized state of ~1 eV. Deposition of (Ba,Sr)TiO3 onto a metallic Pt substrate also results in a barrier height of 1.0 eV. | |
dc.language.iso | en | |
dc.publisher | American Physical Society | |
dc.subject.en | Photoelectron spectroscopy | |
dc.subject.en | Thin films | |
dc.subject.en | Interface | |
dc.subject.en | SrTiO3 | |
dc.subject.en | Single crystal | |
dc.subject.en | TiO3 | |
dc.subject.en | Ba | |
dc.subject.en | Sr | |
dc.title.en | Barrier height at (Ba,Sr)TiO3/Pt interfaces studied by photoemission | |
dc.type | Article de revue | |
dc.identifier.doi | 10.1103/PhysRevB.77.195310 | |
dc.subject.hal | Chimie/Matériaux | |
bordeaux.journal | Physical Review B: Condensed Matter and Materials Physics (1998-2015) | |
bordeaux.page | 195310 (13 p.) | |
bordeaux.volume | 77 | |
bordeaux.issue | 19 | |
bordeaux.peerReviewed | oui | |
hal.identifier | hal-00279962 | |
hal.version | 1 | |
hal.popular | non | |
hal.audience | Internationale | |
hal.origin.link | https://hal.archives-ouvertes.fr//hal-00279962v1 | |
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