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Influence of quenching on the opto-electronic properties of F:SnO2 layers

hal.structure.identifierGroup of Research in Energy and ENvironment from MATerials [GREENMAT]
dc.contributor.authorMANCERIU, Laura Maria
hal.structure.identifierGroup of Research in Energy and ENvironment from MATerials [GREENMAT]
dc.contributor.authorMAHO, Anthony
hal.structure.identifierPlateforme Aquitaine de Caractérisation des Matériaux [PLACAMAT]
dc.contributor.authorLABRUGÈRE, Christine
hal.structure.identifierAGC Glass Europe S.A.
dc.contributor.authorTIXHON, Eric
hal.structure.identifierGroup of Research in Energy and ENvironment from MATerials [GREENMAT]
dc.contributor.authorSCHRIJNEMAKERS, Audrey
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorROUGIER, Aline
hal.structure.identifierGroup of Research in Energy and ENvironment from MATerials [GREENMAT]
dc.contributor.authorCOLSON, Pierre
hal.structure.identifierGroup of Research in Energy and ENvironment from MATerials [GREENMAT]
dc.contributor.authorCLOOTS, Rudi
dc.date.issued2020-06-30
dc.identifier.issn2470-1343
dc.description.abstractEnFor many opto-electronic applications, F:SnO2 materials must benefit from high transparency, high conductivity, and high mechanical strength even after quenching. The purpose of this study was to investigate the influence of quenching on the opto-electronic properties of the F:SnO2 layers synthesized at high temperature on SixCyO-coated soda-lime glass by atmospheric chemical vapor deposition. The morphology, structure, and composition of the layers were studied before and after quenching in air- and oxygen-rich atmospheres at 670 °C. The free carrier concentration was reduced by oxygen vacancy (VO) passivation, as well as by F and Na diffusion, with all effects scaling up with quenching time in air. The transmittance also decreased with quenching time as Na impurities acted as absorption and electron recombination centers. In an oxygen-rich atmosphere, the VO passivation was even more emphasized, with however a moderate contribution to conductivity loss. The F:SnO2 layer microstructure and composition were rather fringed through high-temperature deposition. The almost invariable free carrier concentration and transmittance of the F:SnO2 samples quenched in O2 versus air were related to a moderation in Na diffusion. For long quenching times (>20 min) in air, Na and F diffusion prevailed explaining the conductivity drop.
dc.language.isoen
dc.publisherACS Publications
dc.title.enInfluence of quenching on the opto-electronic properties of F:SnO2 layers
dc.typeArticle de revue
dc.identifier.doi10.1021/acsomega.0c00589
dc.subject.halChimie/Matériaux
bordeaux.journalACS Omega
bordeaux.page14999-15006
bordeaux.volume5
bordeaux.issue25
bordeaux.peerReviewedoui
hal.identifierhal-02892544
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-02892544v1
bordeaux.COinSctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=ACS%20Omega&rft.date=2020-06-30&rft.volume=5&rft.issue=25&rft.spage=14999-15006&rft.epage=14999-15006&rft.eissn=2470-1343&rft.issn=2470-1343&rft.au=MANCERIU,%20Laura%20Maria&MAHO,%20Anthony&LABRUG%C3%88RE,%20Christine&TIXHON,%20Eric&SCHRIJNEMAKERS,%20Audrey&rft.genre=article


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