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Low-temperature and high-pressure µSR study of the strongly correlated CeNiSnHx compounds

hal.structure.identifierMatériaux, Rayonnements, Structure [NEEL - MRS]
dc.contributor.authorISNARD, Olivier
hal.structure.identifierFaculty of Physics
dc.contributor.authorRUSU, C.
hal.structure.identifierFaculty of Physics
dc.contributor.authorDUDRIC, Roxana
hal.structure.identifierFaculty of Physics
dc.contributor.authorANDREICA, Daniel
hal.structure.identifierPaul Scherrer Institute [PSI]
dc.contributor.authorAMATO, Alex
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorCHEVALIER, Bernard
dc.date.issued2016
dc.identifier.issn2469-9950
dc.description.abstractEnHydrogen insertion in the CeNiSn Kondo semiconductor induces antiferromagnetic ordering for CeNiSnH below TN=4.5K whereas CeNiSnH1.8 orders ferromagnetically below TC=7.0K. We present a detailed investigation of these CeNiSnHx compounds by means of muon spin spectroscopy performed at both ambient and high pressure (up to 23 kbar). It is shown that both magnetic ordering temperatures are sensitive to the applied pressure but in opposite directions, i.e., dTCdp=−0.17Kkbar−1 for CeNiSnH1.8 and dTNdp=0.016Kkbar−1 for CeNiSnH, respectively. This difference is discussed in terms of hydrogen-induced modification of the balance between the Ruderman-Kittel-Kasuya-Yosida (RKKY) and the Kondo interactions. The µSR study demonstrates that the CeNiSnH and CeNiSnH1.8 are on different sides of Doniach's dome. The behavior of the CeNiSnH1.8 is interpreted as resulting from an increase of the hybridization between 4f and 5d states and a concomitant steep increase of the Kondo temperature upon applying pressure. In the quest for a quantum critical point, an estimated pressure of about 35 kbar is expected to suppress the magnetism in CeNiSnH1.8.
dc.language.isoen
dc.publisherAmerican Physical Society
dc.title.enLow-temperature and high-pressure µSR study of the strongly correlated CeNiSnHx compounds
dc.typeArticle de revue
dc.identifier.doi10.1103/PhysRevB.93.224424
dc.subject.halChimie/Matériaux
bordeaux.journalPhysical Review B
bordeaux.page224424
bordeaux.volume93
bordeaux.issue22
bordeaux.peerReviewedoui
hal.identifierhal-01339953
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-01339953v1
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