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hal.structure.identifierDepartment of Electrical Engineering
dc.contributor.authorZOU, Qi Ming
hal.structure.identifierDepartment of Electrical Engineering
dc.contributor.authorDENG, Lei Min
hal.structure.identifierDepartment of Electrical Engineering
dc.contributor.authorLI, Da Wei
hal.structure.identifierDepartment of Electrical Engineering
dc.contributor.authorZHOU, Yun Shen
hal.structure.identifierDepartment of Electrical Engineering
dc.contributor.authorGOLGIR, Hossein Rabiee
hal.structure.identifierDepartment of Electrical Engineering
dc.contributor.authorKERAMATNEJAD, Kamran
hal.structure.identifierDepartment of Electrical Engineering
dc.contributor.authorFAN, Li Sha
hal.structure.identifierSchool of Mechanical Engineering
dc.contributor.authorJIANG, Lan
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorSILVAIN, Jean-François
hal.structure.identifierDepartment of Electrical Engineering
dc.contributor.authorLU, Yong Feng
dc.date.issued2017-10-12
dc.identifier.issn1944-8244
dc.description.abstractEnTraditional ceramic-based, high-temperature electrode materials (e.g., lanthanum chromate) are severely limited due to their conditional electrical conductivity and poor stability under harsh circumstances. Advanced composite structures based on vertically aligned carbon nanotubes (VACNTs) and high-temperature ceramics are expected to address this grand challenge, in which ceramic serves as a shielding layer protecting the VACNTs from the oxidation and erosive environment, while the VACNTs work as a conductor. However, it is still a great challenge to fabricate VACNT/ceramic composite structures due to the limited diffusion of ceramics inside the VACNT arrays. In this work, we report on the controllable fabrication of infiltrated (and noninfiltrated) VACNT/silicon composite structures via thermal chemical vapor deposition (CVD) [and laser-assisted CVD]. In laser-assisted CVD, low-crystalline silicon (Si) was quickly deposited at the VACNT subsurfaces/surfaces followed by the formation of high-crystalline Si layers, thus resulting in noninfiltrated composite structures. Unlike laser-assisted CVD, thermal CVD activated the precursors inside and outside the VACNTs simultaneously, which realized uniform infiltrated VACNT/Si composite structures. The growth mechanisms for infiltrated and noninfiltrated VACNT/ceramic composites, which we attributed to the different temperature distributions and gas diffusion mechanism in VACNTs, were investigated. More importantly, the as-farbicated composite structures exhibited excellent multifunctional properties, such as excellent antioxidative ability (up to 1100 °C), high thermal stability (up to 1400 °C), good high velocity hot gas erosion resistance, and good electrical conductivity (∼8.95 Sm–1 at 823 K). The work presented here brings a simple, new approach to the fabrication of advanced composite structures for hot electrode applications.
dc.language.isoen
dc.publisherWashington, D.C. : American Chemical Society
dc.subject.enceramic composite
dc.subject.enhigh-temperature electrode
dc.subject.eninfiltration
dc.subject.enthermal chemical vapor deposition
dc.subject.envertically aligned carbon nanotube
dc.subject.enVertically aligned carbon nanotube
dc.subject.enhigh temperature electrode
dc.title.enThermally stable and electrically conductive, vertically aligned carbon nanotube/silicon infiltrated composite structures for high-temperature electrodes
dc.typeArticle de revue
dc.identifier.doi10.1021/acsami.7b12087
dc.subject.halChimie/Matériaux
bordeaux.journalACS Applied Materials & Interfaces
bordeaux.page37340-37349
bordeaux.volume9
bordeaux.issue42
bordeaux.peerReviewedoui
hal.identifierhal-01652001
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-01652001v1
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