Evaluation of photoelectrical properties of Bi doped CdTe crystals
| hal.structure.identifier | Institute of Materials Science and Applied Research | |
| dc.contributor.author | KADYS, Arunas | |
| hal.structure.identifier | Institute of Materials Science and Applied Research | |
| dc.contributor.author | JARAŠIUNAS, Kestutis | |
| hal.structure.identifier | Departamento de Fisica de Materiales | |
| dc.contributor.author | SAUCEDO, E. | |
| hal.structure.identifier | Departamento de Fisica de Materiales | |
| dc.contributor.author | DIEGUEZ, E. | |
| hal.structure.identifier | Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB] | |
| dc.contributor.author | LAUNAY, Jean-Claude | |
| hal.structure.identifier | Centre Spatial de Liège [CSL] | |
| dc.contributor.author | VERSTRAETEN, David | |
| dc.date.issued | 2008 | |
| dc.identifier.issn | 0957-4522 | |
| dc.description.abstractEn | Nonequilibrium carrier generation, transport, and recombination features have been investigated in Bi-doped and Yb-codoped bulk CdTe crystals, using time-resolved picosecond free-carrier and photorefractive grating techniques. Peculiarities of deep-impurity dependent carrier generation were studied at below band-gap photoexcitation using 1064 nm wavelength. Carrier transport in light created space charge field provided the instantaneous diffusion coefficient values, dependent on excitation energy, and revealed a sign of the dominant photoexcited carriers in the crystals. The studies provided also a deeper insight into an initial occupation of deep impurity levels, which was found strongly dependent on doping and co-doping. At low Bi density (<i>∼</i>2 × 10<sup>17</sup> cm<sup>−3</sup>), the hole generation was dominant, while at higher doping (8 × 10<sup>17</sup> cm<sup>−3</sup>) the bipolar plasma generation prevailed. Codoping by Yb (∼5 × 10<sup>17</sup> cm<sup>−3</sup>) revealed deep donor features of deep defects and formation of a strong space charge field. Carrier dynamics in the given crystals was compared with CdTe:V ones, where vanadium is known to form the mid-gap donor levels. | |
| dc.language.iso | en | |
| dc.publisher | Springer Verlag | |
| dc.subject.en | Crystals | |
| dc.subject.en | Photoelectric properties | |
| dc.subject.en | CdTe | |
| dc.title.en | Evaluation of photoelectrical properties of Bi doped CdTe crystals | |
| dc.type | Article de revue | |
| dc.identifier.doi | 10.1007/s10854-008-9694-1 | |
| dc.subject.hal | Chimie/Matériaux | |
| bordeaux.journal | Journal of Materials Science: Materials in Electronics | |
| bordeaux.page | 234-238 | |
| bordeaux.volume | 19 | |
| bordeaux.issue | Supplement 1 | |
| bordeaux.peerReviewed | oui | |
| hal.identifier | hal-00369084 | |
| hal.version | 1 | |
| hal.popular | non | |
| hal.audience | Internationale | |
| hal.origin.link | https://hal.archives-ouvertes.fr//hal-00369084v1 | |
| bordeaux.COinS | ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Journal%20of%20Materials%20Science:%20Materials%20in%20Electronics&rft.date=2008&rft.volume=19&rft.issue=Supplement%201&rft.spage=234-238&rft.epage=234-238&rft.eissn=0957-4522&rft.issn=0957-4522&rft.au=KADYS,%20Arunas&JARA%C5%A0IUNAS,%20Kestutis&SAUCEDO,%20E.&DIEGUEZ,%20E.&LAUNAY,%20Jean-Claude&rft.genre=article |
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