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hal.structure.identifierInstitute of Materials Science and Applied Research
dc.contributor.authorKADYS, Arunas
hal.structure.identifierInstitute of Materials Science and Applied Research
dc.contributor.authorJARAŠIUNAS, Kestutis
hal.structure.identifierDepartamento de Fisica de Materiales
dc.contributor.authorSAUCEDO, E.
hal.structure.identifierDepartamento de Fisica de Materiales
dc.contributor.authorDIEGUEZ, E.
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorLAUNAY, Jean-Claude
hal.structure.identifierCentre Spatial de Liège [CSL]
dc.contributor.authorVERSTRAETEN, David
dc.date.issued2008
dc.identifier.issn0957-4522
dc.description.abstractEnNonequilibrium carrier generation, transport, and recombination features have been investigated in Bi-doped and Yb-codoped bulk CdTe crystals, using time-resolved picosecond free-carrier and photorefractive grating techniques. Peculiarities of deep-impurity dependent carrier generation were studied at below band-gap photoexcitation using 1064 nm wavelength. Carrier transport in light created space charge field provided the instantaneous diffusion coefficient values, dependent on excitation energy, and revealed a sign of the dominant photoexcited carriers in the crystals. The studies provided also a deeper insight into an initial occupation of deep impurity levels, which was found strongly dependent on doping and co-doping. At low Bi density (<i>∼</i>2 × 10<sup>17</sup> cm<sup>−3</sup>), the hole generation was dominant, while at higher doping (8 × 10<sup>17</sup> cm<sup>−3</sup>) the bipolar plasma generation prevailed. Codoping by Yb (∼5 × 10<sup>17</sup> cm<sup>−3</sup>) revealed deep donor features of deep defects and formation of a strong space charge field. Carrier dynamics in the given crystals was compared with CdTe:V ones, where vanadium is known to form the mid-gap donor levels.
dc.language.isoen
dc.publisherSpringer Verlag
dc.subject.enCrystals
dc.subject.enPhotoelectric properties
dc.subject.enCdTe
dc.title.enEvaluation of photoelectrical properties of Bi doped CdTe crystals
dc.typeArticle de revue
dc.identifier.doi10.1007/s10854-008-9694-1
dc.subject.halChimie/Matériaux
bordeaux.journalJournal of Materials Science: Materials in Electronics
bordeaux.page234-238
bordeaux.volume19
bordeaux.issueSupplement 1
bordeaux.peerReviewedoui
hal.identifierhal-00369084
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-00369084v1
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