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dc.contributor.authorARTEMENKO, Alla
dc.contributor.authorPAYAN, Sandrine
dc.contributor.authorROUSSEAU, Anthony
dc.contributor.authorLEVASSEUR, Delphin
dc.contributor.authorARVEUX, Emmanuel
dc.contributor.authorMAGLIONE, Mario
dc.contributor.authorGUEGAN, Georges
dc.date.accessioned2022-10-12T08:32:01Z
dc.date.available2022-10-12T08:32:01Z
dc.date.issued2013
dc.identifier.issn2158-3226
dc.identifier.urihttps://oskar-bordeaux.fr/handle/20.500.12278/149852
dc.description.abstractEnWe report a dielectric relaxation in BaTiO3-based ferroelectric thin films of different composition and with several growth modes: sputtering (with and without magnetron) and sol-gel. The relaxation was observed at cryogenic temperatures (T < 100 K) for frequencies from 100 Hz up to 10 MHz. This relaxation activation energy is always lower than 200 meV and is very similar to the relaxation that we reported in the parent bulk perovskites. Based on our Electron Paramagnetic Resonance (EPR) investigation, we ascribe this dielectric relaxation to the hopping of electrons among Ti3+-V(O) charged defects. Being dependent on the growth process and on the amount of oxygen vacancies, this relaxation can be a useful probe of defects in actual integrated capacitors with no need for specific shaping.
dc.language.isoen
dc.publisherAmerican Institute of Physics- AIP Publishing LLC
dc.subject.enBarium compounds
dc.subject.enFerroelectric thin films
dc.subject.enSol-gel processing
dc.subject.enSputter deposition
dc.subject.enTitanium compounds
dc.title.enLow temperature dielectric relaxation and charged defects in ferroelectric thin films
dc.typeArticle de revue
dc.identifier.doi10.1063/1.4802242
dc.subject.halChimie/Matériaux
bordeaux.journalAIP Advances
bordeaux.page042111
bordeaux.volume3
bordeaux.hal.laboratoriesInstitut de Chimie de la Matière Condensée de Bordeaux (ICMCB) - UMR 5026*
bordeaux.issue4
bordeaux.institutionUniversité de Bordeaux
bordeaux.institutionBordeaux INP
bordeaux.institutionCNRS
bordeaux.peerReviewedoui
hal.identifierhal-00828027
hal.version1
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-00828027v1
bordeaux.COinSctx_ver=Z39.88-2004&amp;rft_val_fmt=info:ofi/fmt:kev:mtx:journal&amp;rft.jtitle=AIP%20Advances&amp;rft.date=2013&amp;rft.volume=3&amp;rft.issue=4&amp;rft.spage=042111&amp;rft.epage=042111&amp;rft.eissn=2158-3226&amp;rft.issn=2158-3226&amp;rft.au=ARTEMENKO,%20Alla&amp;PAYAN,%20Sandrine&amp;ROUSSEAU,%20Anthony&amp;LEVASSEUR,%20Delphin&amp;ARVEUX,%20Emmanuel&amp;rft.genre=article


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