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hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorARVEUX, Emmanuel
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorPAYAN, Sandrine
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorMAGLIONE, Mario
hal.structure.identifierInstitute of Materials Science
dc.contributor.authorKLEIN, Andréas
dc.date.issued2010
dc.identifier.issn0169-4332
dc.description.abstractEnWe have used in situ photoemission spectroscopy to investigate Niobium doping in polycristalline BaTiO<sub>3</sub>. The valence band maximum position progressively shifts from 2.5 eV for undoped to 2.84 eV for Nb-doped films. Ceramics and single crystal have been investigated for comparison with thin films. Nb-doped BaTiO<sub>3</sub> ceramics and Nb-doped SrTiO<sub>3</sub> single crystal show higher Fermi level position indicating that our doped films are less conducting regarding their bulk parents. This was confirmed by impedance spectroscopy under variable temperature. Large amount of niobium is clearly observable at surface but the amount of dopant is drastically reduced below the near-surface region, as evidenced by depth profile. Therefore, we provide evidence of surface segregation which would explain the contrasted resistivity values reported in literature for such donor-doped films.
dc.language.isoen
dc.publisherElsevier
dc.subject.enBaTiO3
dc.subject.enTitanates
dc.subject.enFilms
dc.subject.enPTCR
dc.subject.enSegregation
dc.subject.enSurfaces
dc.subject.enXPS
dc.title.enSurface segregation in Nb-doped BaTiO<sub>3</sub> films
dc.typeArticle de revue
dc.identifier.doi10.1016/j.apsusc.2010.03.146
dc.subject.halChimie/Matériaux
bordeaux.journalApplied Surface Science
bordeaux.page6228-6232
bordeaux.volume256
bordeaux.issue21
bordeaux.peerReviewedoui
hal.identifierhal-00494479
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-00494479v1
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