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hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorMATAR, Samir F.
hal.structure.identifierInstitut für Anorganische Chemie
dc.contributor.authorWEIHRICH, Richard
hal.structure.identifierInstitut für Anorganische Chemie
dc.contributor.authorKUROWSKI, Daniel
hal.structure.identifierInstitut für Anorganische Chemie
dc.contributor.authorPFITZNER, A.
hal.structure.identifierInstitut für Physik
dc.contributor.authorEYERT, Volker
dc.date.created2005
dc.date.issued2005
dc.identifier.issn1098-0121
dc.description.abstractEnThe electronic band structures of orthorhombic (oP28) and monoclinic (mC28) MnSb2S4 were investigated with ab initio calculations in the local spin density approximation to the density functional theory. An analysis of the electronic properties and of the chemical bonding is provided using the augmented spherical wave method considering nonmagnetic, ferromagnetic, ferrimagnetic, and antiferromagnetic model orderings. In agreement with experimental results both modifications of MnSb2S4 are predicted to be antiferromagnetic. While the experimental band gap is missed for the monoclinic polymorph, the calculated band gap for orthorhombic MnSb2S4 is close to the experimental one.
dc.language.isoen
dc.publisherAmerican Physical Society
dc.subject.enElectronic structure
dc.subject.enAntiferromagnetic
dc.subject.enSemiconductors
dc.subject.enMnSb2S4
dc.title.enElectronic structure of the antiferromagnetic semiconductor MnSb2S4.
dc.typeArticle de revue
dc.identifier.doi10.1103/PhysRevB.71.235207
dc.subject.halChimie/Matériaux
bordeaux.journalPhysical Review B: Condensed Matter and Materials Physics (1998-2015)
bordeaux.pagep. 235207 (9 p.)
bordeaux.volumevol. 71, n° 23
bordeaux.peerReviewedoui
hal.identifierhal-00015108
hal.version1
hal.popularnon
hal.audienceNon spécifiée
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-00015108v1
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