New hydrides REScSiH and REScGeH (RE = La, Ce) : structure, magnetism, and chemical bonding
hal.structure.identifier | Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB] | |
dc.contributor.author | CHEVALIER, Bernard | |
hal.structure.identifier | Institut für Anorganische und Analytische Chemie | |
dc.contributor.author | HERMES, Wilfried | |
hal.structure.identifier | Institut für Anorganische und Analytische Chemie | |
dc.contributor.author | HEYING, Birgit | |
hal.structure.identifier | Institut für Anorganische und Analytische Chemie | |
dc.contributor.author | RODEWALD, Ute Ch. | |
hal.structure.identifier | Institut für Anorganische und Analytische Chemie | |
dc.contributor.author | HAMMERSCHMIDT, Adrienne | |
hal.structure.identifier | Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB] | |
dc.contributor.author | MATAR, Samir F. | |
hal.structure.identifier | Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB] | |
dc.contributor.author | GAUDIN, Etienne | |
hal.structure.identifier | Institut für Anorganische und Analytische Chemie | |
dc.contributor.author | PÖTTGEN, Rainer | |
dc.date.issued | 2010 | |
dc.identifier.issn | 0897-4756 | |
dc.description.abstractEn | The La<sub>2</sub>Sb type silicides and germanides REScSi and REScGe (RE = La, Ce) were synthesized from the elements by arc-melting and subsequent annealing at 1170 K. The structures of LaScSi and LaScGe were refined on the basis of single-crystal X-ray diffraction data. The structures consist of a stacking of two-dimensional [ScSi] networks with ScSi<sub>4/4</sub> rectangles, which are separated by rare earth atoms, which leave RE<sub>4/4</sub> tetrahedral voids. The latter can be completely filled by hydrogenation leading to the quaternary hydrides REScSiH and REScGeH (RE = La, Ce). Hydrogenation is accompanied by an anisotropic unit cell expansion, i.e., a decrease in the <i>a</i> lattice parameter and a strong increase in <i>c</i>. The H-insertion into the compounds based on cerium induces for both a quasi-2D structure, a strong decrease of their antiferromagnetic ordering; for instance <i>T</i><sub>N</sub> decreases from 26 to 3.0 K in the sequence CeScSi → CeScSiH and the occurrence of the influence of the Kondo effect evidenced by electrical resistivity and specific heat measurements. The electronic structure calculation applied to CeScSi and its hydride reveals strong Ce−H bonding influencing the magnetic properties of CeScSiH. | |
dc.language.iso | en | |
dc.publisher | American Chemical Society | |
dc.title.en | New hydrides REScSiH and REScGeH (RE = La, Ce) : structure, magnetism, and chemical bonding | |
dc.type | Article de revue | |
dc.identifier.doi | 10.1021/cm101290f | |
dc.subject.hal | Chimie/Matériaux | |
bordeaux.journal | Chemistry of Materials | |
bordeaux.page | 5013-5021 | |
bordeaux.volume | 22 | |
bordeaux.issue | 17 | |
bordeaux.peerReviewed | oui | |
hal.identifier | hal-00528356 | |
hal.version | 1 | |
hal.popular | non | |
hal.audience | Internationale | |
hal.origin.link | https://hal.archives-ouvertes.fr//hal-00528356v1 | |
bordeaux.COinS | ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Chemistry%20of%20Materials&rft.date=2010&rft.volume=22&rft.issue=17&rft.spage=5013-5021&rft.epage=5013-5021&rft.eissn=0897-4756&rft.issn=0897-4756&rft.au=CHEVALIER,%20Bernard&HERMES,%20Wilfried&HEYING,%20Birgit&RODEWALD,%20Ute%20Ch.&HAMMERSCHMIDT,%20Adrienne&rft.genre=article |
Fichier(s) constituant ce document
Fichiers | Taille | Format | Vue |
---|---|---|---|
Il n'y a pas de fichiers associés à ce document. |