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hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorDENIS, Annaïg
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorGOGLIO, Graziella
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorDEMAZEAU, Gérard
dc.date.issued2006
dc.identifier.issn0927-796X
dc.description.abstractEnOptoelectrical and microelectronic devices involving gallium nitride have become a challenge but their development is limited because of a lack of suitable substrates. This paper deals with the crystal growth of gallium nitride, the processes leading to GaN bulk crystals being significantly expanded during the last decade (the ones involving GaN thin films or nanocrystallites are not studied in this review). The main reviewed routes are: (i) the high pressure nitrogen solution growth (H.P.N.S.G.), (ii) the Na flux method, and (iii) the ammonothermal crystal growth.
dc.language.isoen
dc.publisherElsevier
dc.subject.enGaN
dc.subject.enCrystal growth
dc.subject.enNitrides
dc.subject.enFunctional materials
dc.title.enGallium nitride bulk crystal growth processes : a review
dc.typeArticle de revue
dc.identifier.doi10.1016/j.mser.2005.11.001
dc.subject.halChimie/Matériaux
bordeaux.journalMaterials Science and Engineering: R: Reports
bordeaux.page167-194
bordeaux.volume50
bordeaux.issue6
bordeaux.peerReviewedoui
hal.identifierhal-00020353
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-00020353v1
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