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hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorMATAR, Samir F.
hal.structure.identifierInstitut für Anorganische und Analytische Chemie
dc.contributor.authorPÖTTGEN, Rainer
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorCHEVALIER, Bernard
dc.date.issued2012
dc.identifier.issn0022-4596
dc.description.abstractEnThe dimorphism of the intermediate valence ternary cerium silicide CeIr2Si2 in the ThCr2Si2 (α) and CaBe2Ge2 (β) modifications is addressed in the framework of the density functional theory. The geometry optimization is in good agreement with the experiment and the subsequent establishment of the energy-volume equation of state (EOS) indicates a stabilization of the β-type relative to the α-type concomitant with the trend of the cerium valence, changing to tetravalent in β-CeIr2Si2. This is equally shown from the site projected DOS and from the large increase of the electronic contribution to the specific heat. The chemical bonding indicates the strongest bonding interactions within the Ir-Si substructure in both varieties. Stabilization of β-CeIr2Si2 with almost tetravalent cerium is in good agreement with ThIVIr2Si2 which exclusively crystallizes in the CaBe2Ge2 type. The EOS behavior of different RIr2Si2 (R=Th, Ce, La) is comparatively discussed.
dc.language.isoen
dc.publisherElsevier
dc.subject.enIntermetallic compounds
dc.subject.enCeIr2Si2
dc.subject.enElectronic structure
dc.subject.enEquation of state
dc.subject.enDimorphism
dc.title.enElectronic structure and chemical bonding of α- and β-CeIr2Si2 intermediate valence compounds
dc.typeArticle de revue
dc.identifier.doi10.1016/j.jssc.2011.11.041
dc.subject.halChimie/Matériaux
bordeaux.journalJournal of Solid State Chemistry
bordeaux.page81-86
bordeaux.volume186
bordeaux.peerReviewedoui
hal.identifierhal-00663014
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-00663014v1
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