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Effect of Mn and Nb Doped BaTiO3 in the Dielectric Properties in the Ba(Mn1/2Nb1/2)xTi1−xO3

hal.structure.identifierLaboratoire des Matériaux Ferroélectriques [LMF]
dc.contributor.authorBOUJELBEN, Faiza
hal.structure.identifierLaboratoire des Matériaux Ferroélectriques [LMF]
dc.contributor.authorKHEMAKHEM, Hamadi
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorSIMON, Annie
dc.date.issued2012
dc.identifier.issn0361-5235
dc.description.abstractEnPolycrystalline samples of BaTi1−x (Mn0.5Nb0.5)x O3 with x = 0.025, 0.05, 0.075, 0.1, 0.125, 0.15, and 0.175 have been synthesized by the high-temperature solid-state reaction technique. The effects of cationic substitution of manganese and niobium for titanium at B sites of the BaTiO3 perovskite lattice on symmetry and dielectric properties were investigated. X-ray diffraction at room temperature and dielectric permittivity in the temperature range from 85 K to 500 K and frequency range from 100 Hz to 2 × 105 Hz were studied. The evolution from a normal ferroelectric to a relaxor ferroelectric is emphasized. T C or T m decreases when both manganese and niobium are introduced into the lattice of BaTiO3. High dielectric constant of around 9000 at T C = 280 K was found for Ba Ti0.925(Mn0.5Nb0.5)0.075O3 ceramic. A relaxor ferroelectric with ΔT m = 60 K and er¢ of about 3500 at 10 kHz with T m = 150 K was found for the BaTi0.85(Mn0.5Nb0.5)0.15O3 sample.
dc.language.isoen
dc.publisherInstitute of Electrical and Electronics Engineers
dc.subject.enFerroelectrics
dc.subject.enX-ray diffraction
dc.subject.enDielectric response
dc.title.enEffect of Mn and Nb Doped BaTiO3 in the Dielectric Properties in the Ba(Mn1/2Nb1/2)xTi1−xO3
dc.typeArticle de revue
dc.identifier.doi10.1007/s11664-012-2027-4
dc.subject.halChimie/Matériaux
bordeaux.journalJournal of Electronic Materials
bordeaux.page2250-2255
bordeaux.volume41
bordeaux.issue8
bordeaux.peerReviewedoui
hal.identifierhal-00714515
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-00714515v1
bordeaux.COinSctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Journal%20of%20Electronic%20Materials&rft.date=2012&rft.volume=41&rft.issue=8&rft.spage=2250-2255&rft.epage=2250-2255&rft.eissn=0361-5235&rft.issn=0361-5235&rft.au=BOUJELBEN,%20Faiza&KHEMAKHEM,%20Hamadi&SIMON,%20Annie&rft.genre=article


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