Establishment of the correlation law between electron density, infrared absorption and doping concentration in Ga3+-doped ZnO
hal.structure.identifier | Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB] | |
dc.contributor.author | TRENQUE, Isabelle | |
hal.structure.identifier | Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB] | |
dc.contributor.author | MORNET, Stéphane | |
hal.structure.identifier | Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB] | |
dc.contributor.author | DUGUET, Etienne | |
hal.structure.identifier | Institut de Chimie de la Matière Condensée de Bordeaux [ICMCB] | |
dc.contributor.author | GAUDON, Manuel | |
dc.date.issued | 2013 | |
dc.identifier.issn | 0025-5408 | |
dc.description.abstractEn | A polyol-mediated synthesis allows the obtaining of doped zinc oxides nanoparticles with tunable infrared absorption properties via the doping concentration. In a first step the prepared nanoparticles are characterized in terms of chemical composition (purity and homogeneity), crystallite size and agglomerate morphology. A correlation law between the infrared absorbing efficiency, the free electron density and the doping concentration is then clearly established; this law is based on the neighboring probability of the dopant ions in the crystal network. | |
dc.language.iso | en | |
dc.publisher | Elsevier | |
dc.subject.en | Oxides | |
dc.subject.en | Chemical synthesis | |
dc.subject.en | Optical properties | |
dc.title.en | Establishment of the correlation law between electron density, infrared absorption and doping concentration in Ga3+-doped ZnO | |
dc.type | Article de revue | |
dc.identifier.doi | 10.1016/j.materresbull.2012.12.016 | |
dc.subject.hal | Chimie/Matériaux | |
bordeaux.journal | Materials Research Bulletin | |
bordeaux.page | 1155-1159 | |
bordeaux.volume | 48 | |
bordeaux.issue | 3 | |
bordeaux.peerReviewed | oui | |
hal.identifier | hal-00785619 | |
hal.version | 1 | |
hal.popular | non | |
hal.audience | Internationale | |
hal.origin.link | https://hal.archives-ouvertes.fr//hal-00785619v1 | |
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