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Evolution of the structure and properties of solution-based Ge23Sb7S70 thin films during heat treatment

hal.structure.identifierInstitut des Sciences Moléculaires [ISM]
hal.structure.identifierSchool of Materials Science and Engineering [COMSET]
dc.contributor.authorNOVAK, Jacklyn
hal.structure.identifierInstitut des Sciences Moléculaires [ISM]
hal.structure.identifierSchool of Materials Science and Engineering [COMSET]
dc.contributor.authorNOVAK, Spencer
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorDUSSAUZE, Marc
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorFARGIN, Evelyne
hal.structure.identifierInstitut des Sciences Moléculaires [ISM]
dc.contributor.authorADAMIETZ, Frédéric
hal.structure.identifierSchool of Materials Science and Engineering [COMSET]
dc.contributor.authorMUSGRAVES, David John
hal.structure.identifierSchool of Materials Science and Engineering [COMSET]
dc.contributor.authorRICHARDSON, Kathleen
dc.date.issued2013
dc.identifier.issn0025-5408
dc.description.abstractEnOptical devices such as waveguides and resonators have typically been produced through standard vacuum deposition and photolithography techniques. Solution-derived chalcogenide films are presented as an alternative for devices not easily fabricated through these standard techniques; however, many details of the chemical processes involved in film deposition are still unknown. We present a detailed analysis of the formation of Ge23Sb7S70 films from solution: solvent removal was studied using in situ FTIR and UV-visible absorption spectroscopies during heat treatments at various temperatures, and the glass structure and glass-solvent interactions were studied through analysis of the far- and mid-IR regions, respectively. Correlations have been established between atomic-level structural aspects and macroscopic physical properties such as refractive index, band gap energies, and surface roughness.
dc.language.isoen
dc.publisherElsevier
dc.subject.enAmorphous material
dc.subject.enChalcogenides
dc.subject.enChemical synthesis
dc.subject.enAtomic force microscopy
dc.subject.enInfrared spectroscopy
dc.title.enEvolution of the structure and properties of solution-based Ge23Sb7S70 thin films during heat treatment
dc.typeArticle de revue
dc.identifier.doi10.1016/j.materresbull.2012.12.008
dc.subject.halChimie/Matériaux
bordeaux.journalMaterials Research Bulletin
bordeaux.page1250-1255
bordeaux.volume48
bordeaux.issue3
bordeaux.peerReviewedoui
hal.identifierhal-00785624
hal.version1
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-00785624v1
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