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hal.structure.identifierLaboratoire de Chimie des Matériaux Solides
dc.contributor.authorALGA, M.
hal.structure.identifierLaboratoire de Chimie des Matériaux Solides
dc.contributor.authorAMMAR, Abdelaziz
hal.structure.identifierLaboratoire de Chimie des Matériaux Solides
dc.contributor.authorESSALIM, R.
hal.structure.identifierLaboratoire de Chimie des Matériaux Solides
dc.contributor.authorTANOUTI, B.
hal.structure.identifierLaboratoire de Physique du Solide et des Couches Minces
dc.contributor.authorOUTZOURHIT, A.
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorMAUVY, Fabrice
hal.structure.identifierInstitut de Chimie de la Matière Condensée de Bordeaux [ICMCB]
dc.contributor.authorDECOURT, Rodolphe
dc.date.issued2005
dc.identifier.issn0947-7047
dc.description.abstractEnDoubly substitution of vanadium by Cu and Co in the limit of 10% in Bi4V2O11, has led to the formation of the Bi4V1.8Cu0.2−xCoxO10.7 solid solution. X-ray diffraction shows that all the compositions present a tetragonal symmetry. The thermal analysis has revealed that the polymorph γ' phase, which is formed by a partial ordering of oxygen ions in the γ high temperature form, is stabilized at room temperature. The influence of sintering temperature on the microstructure of the samples was investigated by the scanning electron microscopy (SEM). The ceramics sintered at 820 °C for more than 3 hours present micro-craks. The evolution of the electrical conductivity with temperature and the degree of substitution has been investigated by impedance spectroscopy. The sample with x=0.1 presents the highest value of the conductivity ≈4.6×10−2 S·cm−1 at 600 °C.
dc.language.isoen
dc.publisherSpringer Verlag
dc.subject.enBismuth vanadium oxide
dc.subject.enDensity
dc.subject.enDopants
dc.subject.enElectric conductivity
dc.subject.enElectric impedance
dc.subject.enGrain growth
dc.subject.enGrain size
dc.subject.enIR spectra
dc.subject.enSintering
dc.subject.enCrystal structure
dc.title.enStudy on structural, thermal, sintering and conductivity of Cu-Co doubly substituted Bi4V2O11
dc.typeArticle de revue
dc.identifier.doi10.1007/BF02430405
dc.subject.halChimie/Matériaux
bordeaux.journalIonics
bordeaux.pagep. 81-86
bordeaux.volumevol. 11, n° 1-2
bordeaux.peerReviewedoui
hal.identifierhal-00084824
hal.version1
hal.popularnon
hal.audienceNon spécifiée
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-00084824v1
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