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Integrated-Transformer-Based Impedance Matching Method: Impedance Matching With Transformers

dc.rights.licenseopenen_US
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorLANCON, Leo
dc.contributor.authorVALLEE, Hugo
IDREF: 228325021
dc.contributor.authorMONTORIOL, Gilles
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorBRUNELLI, Fabien
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorTARIS, Thierry
IDREF: 07761402X
dc.date.accessioned2022-10-11T11:38:07Z
dc.date.available2022-10-11T11:38:07Z
dc.date.issued2022-08-02
dc.identifier.issn1527-3342en_US
dc.identifier.urioai:crossref.org:10.1109/mmm.2022.3158033
dc.identifier.urihttps://oskar-bordeaux.fr/handle/20.500.12278/148378
dc.description.abstractImpedance matching is a critical aspect of any RF or millimeter-wave (mm-wave) design. Although historically addressed with transmission lines or discrete elements, it can also be implemented with integrated transformers as their quality factors now reach decent values (approximately 10–20) at high frequencies (used at 77 GHz in this article) due to the thicker upper metal layers present in most integrated stacks.
dc.language.isoENen_US
dc.sourcecrossref
dc.subjectResistance
dc.subjectQ-factor
dc.subjectSystematics
dc.subjectPower transmission lines
dc.subjectImpedance matching
dc.subjectResonant frequency
dc.subjectMillimeter wave radar
dc.title.enIntegrated-Transformer-Based Impedance Matching Method: Impedance Matching With Transformers
dc.typeArticle de revueen_US
dc.identifier.doi10.1109/mmm.2022.3158033en_US
dc.subject.halSciences de l'ingénieur [physics]en_US
bordeaux.journalIEEE Microwave Magazineen_US
bordeaux.page40-56en_US
bordeaux.volume23en_US
bordeaux.hal.laboratoriesLaboratoire d’Intégration du Matériau au Système (IMS) - UMR 5218en_US
bordeaux.issue9en_US
bordeaux.institutionUniversité de Bordeauxen_US
bordeaux.institutionBordeaux INPen_US
bordeaux.institutionCNRSen_US
bordeaux.peerReviewedouien_US
bordeaux.inpressnonen_US
bordeaux.import.sourcedissemin
hal.identifierhal-03810419
hal.version1
hal.date.transferred2022-10-11T11:38:10Z
hal.exporttrue
workflow.import.sourcedissemin
dc.rights.ccPas de Licence CCen_US
bordeaux.COinSctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=IEEE%20Microwave%20Magazine&rft.date=2022-08-02&rft.volume=23&rft.issue=9&rft.spage=40-56&rft.epage=40-56&rft.eissn=1527-3342&rft.issn=1527-3342&rft.au=LANCON,%20Leo&VALLEE,%20Hugo&MONTORIOL,%20Gilles&BRUNELLI,%20Fabien&TARIS,%20Thierry&rft.genre=article


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