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dc.rights.licenseopenen_US
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorHENRION, Jean-Charles
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorGHIOTTO, Anthony
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorMARTIN, Tifenn
IDREF: 22822375X
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorPHAM, Jean-Marie
IDREF: 148109985
dc.contributor.authorMARTIN-IGLESIAS, Petronilo
dc.contributor.authorGOUJON, Christophe
dc.contributor.authorCARRÉ, Christophe
dc.date.accessioned2022-07-20T08:44:55Z
dc.date.available2022-07-20T08:44:55Z
dc.date.issued2022-06
dc.identifier.issn1531-1309en_US
dc.identifier.urioai:crossref.org:10.1109/lmwc.2022.3168544
dc.identifier.urihttps://oskar-bordeaux.fr/handle/20.500.12278/140530
dc.description.abstractEnThis letter presents a transition from a top layer grounded coplanar waveguide (GCPW) to an inner layer air-filled substrate-integrated waveguide (AFSIW). Such type of transition is crucial for the interconnection of top layer surface-mounted radio-frequency integrated circuits (RFICs), toward the integration of complete microwave and millimeter-wave systems taking advantage of the low-cost and high-performance AFSIW technological platform. To fulfill the new space application needs, the proposed transition has been developed in the satellite downlink Ka-band ranging from 27.5 to 31 GHz. The structure is detailed with design guidance. For experimental evaluation, a back-to-back prototype has been fabricated and measured. In the operating frequency range, the proposed transition achieves a simulated and measured insertion loss (IL) as low as 0.135 ± 0.015 dB and 0.3 ± 0.18 dB, respectively.
dc.language.isoENen_US
dc.sourcecrossref
dc.subject.enAir-filled substrate-integrated waveguides (AFSIW)
dc.subject.engrounded coplanar waveguides (GCPW)
dc.subject.entransitions
dc.title.enMultilayer GCPW-to-AFSIW Transition for High-Performance Systems on Substrate
dc.typeArticle de revueen_US
dc.identifier.doi10.1109/lmwc.2022.3168544en_US
dc.subject.halSciences de l'ingénieur [physics]/Electromagnétismeen_US
bordeaux.journalIEEE Microwave and Wireless Components Lettersen_US
bordeaux.page676-679en_US
bordeaux.volume32en_US
bordeaux.hal.laboratoriesLaboratoire d’Intégration du Matériau au Système (IMS) - UMR 5218en_US
bordeaux.issue6en_US
bordeaux.institutionUniversité de Bordeauxen_US
bordeaux.institutionBordeaux INPen_US
bordeaux.institutionCNRSen_US
bordeaux.peerReviewedouien_US
bordeaux.inpressnonen_US
bordeaux.import.sourcedissemin
hal.identifierhal-03728209
hal.version1
hal.date.transferred2022-07-20T08:44:57Z
hal.exporttrue
workflow.import.sourcedissemin
dc.rights.ccPas de Licence CCen_US
bordeaux.COinSctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=IEEE%20Microwave%20and%20Wireless%20Components%20Letters&rft.date=2022-06&rft.volume=32&rft.issue=6&rft.spage=676-679&rft.epage=676-679&rft.eissn=1531-1309&rft.issn=1531-1309&rft.au=HENRION,%20Jean-Charles&GHIOTTO,%20Anthony&MARTIN,%20Tifenn&PHAM,%20Jean-Marie&MARTIN-IGLESIAS,%20Petronilo&rft.genre=article


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