Increased Breakdown Voltage and robustness of Embedded power module
| dc.rights.license | open | en_US |
| dc.contributor.author | TABLATI, A. | |
| dc.contributor.author | ALAYLI, N. | |
| dc.contributor.author | ARABI, F. | |
| dc.contributor.author | EL BOUBAKARI, K. | |
| dc.contributor.author | YOUSSEF, T. | |
| hal.structure.identifier | Laboratoire de l'intégration, du matériau au système [IMS] | |
| dc.contributor.author | THEOLIER, L. | |
| hal.structure.identifier | Laboratoire de l'intégration, du matériau au système [IMS] | |
| dc.contributor.author | WOIRGARD, E. | |
| dc.date.accessioned | 2022-07-08T08:02:31Z | |
| dc.date.available | 2022-07-08T08:02:31Z | |
| dc.date.issued | 2022 | |
| dc.date.conference | 2022-04-25 | |
| dc.identifier.uri | https://oskar-bordeaux.fr/handle/20.500.12278/140399 | |
| dc.description.abstractEn | In this paper, a study of the influence of an etching on the electric field and the shear stress distribution is presented. A 100 V embedded PCB half-bridge, named VESA1, has been developed and realized by VEDECOM Institute. The study focuses on increasing the breakdown voltage from 100 V to 800 V. The proposed solution is based on the optimization of the copper plate etching in terms of positioning and sizing. A numerical approach using 2D electrical and thermomechanical simulations has shown that aligning the etching on the die and increasing the width of the etches, allow to attenuate the maximum values of the electric field and to reduce the thermomechanical stresses within the assembly. The first steps of the etching process have been performed to validate the manufacturing process. | |
| dc.language.iso | EN | en_US |
| dc.publisher | IEEE | en_US |
| dc.subject.en | Thermomechanical processes | |
| dc.subject.en | Multichip modules | |
| dc.subject.en | Numerical simulation | |
| dc.subject.en | Etching | |
| dc.subject.en | Robustness | |
| dc.subject.en | Numerical models | |
| dc.subject.en | Copper | |
| dc.title.en | Increased Breakdown Voltage and robustness of Embedded power module | |
| dc.type | Communication dans un congrès avec actes | en_US |
| dc.identifier.doi | 10.1109/EuroSimE54907.2022.9758892 | en_US |
| dc.subject.hal | Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique | en_US |
| bordeaux.page | 1-8 | en_US |
| bordeaux.hal.laboratories | Laboratoire d’Intégration du Matériau au Système (IMS) - UMR 5218 | en_US |
| bordeaux.institution | Université de Bordeaux | en_US |
| bordeaux.institution | Bordeaux INP | en_US |
| bordeaux.institution | CNRS | en_US |
| bordeaux.conference.title | International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) | en_US |
| bordeaux.country | mt | en_US |
| bordeaux.title.proceeding | 2022 23rd International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) | en_US |
| bordeaux.conference.city | St Julian | en_US |
| bordeaux.peerReviewed | oui | en_US |
| bordeaux.import.source | hal | |
| hal.identifier | hal-03665886 | |
| hal.version | 1 | |
| hal.export | false | |
| workflow.import.source | hal | |
| dc.rights.cc | Pas de Licence CC | en_US |
| bordeaux.COinS | ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.date=2022&rft.spage=1-8&rft.epage=1-8&rft.au=TABLATI,%20A.&ALAYLI,%20N.&ARABI,%20F.&EL%20BOUBAKARI,%20K.&YOUSSEF,%20T.&rft.genre=proceeding |
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