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Effects of silicone coating degradation on GaN MQW LEDs performances using physical and chemical analyses

hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorBAILLOT, R.
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorDESHAYES, Y.
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorBECHOU, L.
hal.structure.identifierInstitut des Sciences Moléculaires [ISM]
dc.contributor.authorBUFFETEAU, T.
hal.structure.identifierInstitut des Sciences Moléculaires [ISM]
dc.contributor.authorPIANET, I.
dc.contributor.authorARMAND, C.
dc.contributor.authorVOILLOT, F.
hal.structure.identifierCentre d'Etudes Nucléaires de Bordeaux Gradignan [CENBG]
dc.contributor.authorSORIEUL, S.
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorOUSTEN, Y.
dc.date.issued2010-09
dc.date.conference2010-10-11
dc.description.abstractEnThis work presents a physics of failure (POF) methodology coupling failure signatures with physico-chemical analyses. The aim is to work out electro-optical failure signatures located in packaged InGaN/GaN Multiple Quantum Wells Light Emitting Diodes (MQW LEDs). Electrical and optical characteristics performed after accelerated ageing tests (30 mA/85 °C/1500 h), confirm a 65% drop of optical power and an increase of one decade of leakage current spreading at the silicone oil/chip interfaces. Through measurements of silicone coating fluorescence emission spectra, we demonstrate that the polymer enlarges the LED emission spectrum and shifts central wavelength. This shift is related to silicone oil spectral instability and the central wavelength of packaged LED appears to be temperature insensitive. In this paper, we discriminate the degradation of bulk silicone oil responsible for optical losses from the polymer/chip interface inducing larger leakage current.
dc.language.isoen
dc.publisherElsevier
dc.source.titleMicroelectronics Reliability
dc.title.enEffects of silicone coating degradation on GaN MQW LEDs performances using physical and chemical analyses
dc.typeCommunication dans un congrès
dc.identifier.doi10.1016/j.microrel.2010.07.056
dc.subject.halPhysique [physics]/Physique Nucléaire Expérimentale [nucl-ex]
dc.subject.halPhysique [physics]/Physique [physics]/Optique [physics.optics]
bordeaux.page1568-1573
bordeaux.volume50
bordeaux.countryIT
bordeaux.title.proceedingMicroelectronics Reliability
bordeaux.conference.cityGaeta
bordeaux.peerReviewedoui
hal.identifierin2p3-00532869
hal.version1
hal.invitednon
hal.proceedingsoui
hal.conference.end2010-10-15
hal.popularnon
hal.audienceInternationale
hal.origin.linkhttps://hal.archives-ouvertes.fr//in2p3-00532869v1
bordeaux.COinSctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.btitle=Microelectronics%20Reliability&rft.date=2010-09&rft.volume=50&rft.spage=1568-1573&rft.epage=1568-1573&rft.au=BAILLOT,%20R.&DESHAYES,%20Y.&BECHOU,%20L.&BUFFETEAU,%20T.&PIANET,%20I.&rft.genre=unknown


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