Mechanisms and kinetics during reactive infiltration of molten silicon in porous graphite
| dc.rights.license | open | en_US |
| hal.structure.identifier | Laboratoire des Composites Thermostructuraux [LCTS] | |
| dc.contributor.author | ROGER, Jerome | |
| hal.structure.identifier | Laboratoire des Composites Thermostructuraux [LCTS] | |
| dc.contributor.author | CHOLLON, Georges | |
| dc.date.accessioned | 2021-12-07T15:07:50Z | |
| dc.date.available | 2021-12-07T15:07:50Z | |
| dc.date.issued | 2019-05-01 | |
| dc.identifier.issn | 0272-8842 | en_US |
| dc.identifier.uri | oai:crossref.org:10.1016/j.ceramint.2019.01.191 | |
| dc.identifier.uri | https://oskar-bordeaux.fr/handle/20.500.12278/124033 | |
| dc.description.abstractEn | Liquid silicon Infiltration (LSI) is a fast and economical process to manufacture SiC-based ceramics. For a better understanding of reactive melt infiltration of liquid silicon, the wetting and infiltration of porous graphite by molten silicon were investigated at 1450, 1500 and 1550 °C for duration comprised between 10 s and 1 h. Infiltrations tests were performed in an argon atmosphere with an inductively heated furnace operating with heating and cooling rates of 300 °C.min−1. The formation and growth of SiC grains were investigated at the outer surface and within graphitic carbon substrates with 11% porosity and a narrow pore size distribution centered at 2 μm. The length of the infiltrated zone and the SiC crystals growth were determined from scanning electron microscopy. Rapid spreading and infiltration of molten silicon are observed from the first 60 s. The growth rate of the interfacial SiC layer obeys a fourth-power law with an activation energy of 260 ± 30 kJ mol−1. Pore filling by SiC is limited by volume diffusion with an activation energy equal to 320 ± 40 kJ mol−1. | |
| dc.language.iso | EN | en_US |
| dc.rights | Attribution 3.0 United States | * |
| dc.rights.uri | http://creativecommons.org/licenses/by/3.0/us/ | * |
| dc.source | crossref | |
| dc.subject.en | Grain growth | |
| dc.subject.en | Composites | |
| dc.subject.en | Electron microscopy | |
| dc.subject.en | Carbon | |
| dc.subject.en | SiC | |
| dc.subject.en | Refractories | |
| dc.title.en | Mechanisms and kinetics during reactive infiltration of molten silicon in porous graphite | |
| dc.type | Article de revue | en_US |
| dc.identifier.doi | 10.1016/j.ceramint.2019.01.191 | en_US |
| dc.subject.hal | Sciences de l'ingénieur [physics]/Mécanique [physics.med-ph] | en_US |
| bordeaux.journal | Ceramics International | en_US |
| bordeaux.page | 8690-8699 | en_US |
| bordeaux.volume | 45 | en_US |
| bordeaux.hal.laboratories | Laboratoire des Composites Thermo Structuraux (LCTS) - UMR 5801 | en_US |
| bordeaux.issue | 7 | en_US |
| bordeaux.institution | Université de Bordeaux | en_US |
| bordeaux.institution | CNRS | en_US |
| bordeaux.institution | CEA | en_US |
| bordeaux.peerReviewed | oui | en_US |
| bordeaux.inpress | non | en_US |
| bordeaux.import.source | dissemin | |
| hal.identifier | hal-02070189 | |
| hal.version | 1 | |
| hal.export | true | |
| workflow.import.source | dissemin | |
| dc.rights.cc | CC BY | en_US |
| bordeaux.COinS | ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Ceramics%20International&rft.date=2019-05-01&rft.volume=45&rft.issue=7&rft.spage=8690-8699&rft.epage=8690-8699&rft.eissn=0272-8842&rft.issn=0272-8842&rft.au=ROGER,%20Jerome&CHOLLON,%20Georges&rft.genre=article |
