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dc.rights.licenseopenen_US
dc.contributor.authorBRAUN, Jeffrey L.
dc.contributor.authorKING, Sean W.
dc.contributor.authorHOGLUND, Eric R.
dc.contributor.authorGHARACHEH, Mehrdad Abbasi
dc.contributor.authorSCOTT, Ethan A.
dc.contributor.authorGIRI, Ashutosh
dc.contributor.authorTOMKO, John A.
dc.contributor.authorGASKINS, John T.
dc.contributor.authorAL-KUKHUN, Ahmad
dc.contributor.authorBHATTARAI, Gyanendra
dc.contributor.authorPAQUETTE, Michelle M.
hal.structure.identifierLaboratoire des Composites Thermostructuraux [LCTS]
dc.contributor.authorCHOLLON, Georges
dc.contributor.authorWILLEY, Benjamin
dc.contributor.authorANTONELLI, G. Andrew
dc.contributor.authorGIDLEY, David W.
dc.contributor.authorHWANG, Jinwoo
dc.contributor.authorHOWE, James M.
dc.contributor.authorHOPKINS, Patrick E.
dc.date.accessioned2021-11-18T11:14:59Z
dc.date.available2021-11-18T11:14:59Z
dc.date.issued2021
dc.identifier.issn2475-9953en_US
dc.identifier.urihttps://oskar-bordeaux.fr/handle/20.500.12278/123855
dc.description.abstractEnHydrogenated amorphous dielectric thin films are critical materials in a wide array of technologies. In this work, we present a thorough investigation of the thermal conductivity of hydrogenated amorphous silicon nitride (a−SiNx:H), a ubiquitously used material in which the stoichiometry plays a direct role in its functionality and application. In particular, through chemical, vibrational, and structural analysis in tandem with thermal conductivity measurements on chemically variant silicon nitride films, we show that hydrogen incorporation into silicon nitride disrupts the bonding among silicon and nitrogen atoms, and directly impacts the thermal conductivity, leading to as much as a factor of 2.5 variation in heat transfer. This variability, driven by the change in hydrogen content, is fundamentally related to the changes in the average atomic distances, as we experimentally measure with selected-area electron diffraction and computationally show with molecular dynamics simulations. This, combined with our evidence of chemical and spatial fluctuations on the order of average atomic pair distances, leads us to conclude that the vibrational heat transport in a−SiNx:H is primarily dominated by diffusonlike modes. The results presented in this work combined with our extensive review of prior reports on the thermal conductivity of a−SiNx:H films resolves discrepancies in decades of prior literature and facilitates a more universal understanding of the vibrational heat transport processes in hydrogenated amorphous silicon nitride.
dc.language.isoENen_US
dc.rightsAttribution 3.0 United States*
dc.rights.urihttp://creativecommons.org/licenses/by/3.0/us/*
dc.subject.enThermal conductivity
dc.subject.enAmorphous materials
dc.subject.enThermoreflectance
dc.subject.enMolecular dynamics
dc.subject.enCondensed Matter & Materials Physics
dc.title.enHydrogen effects on the thermal conductivity of delocalized vibrational modes in amorphous silicon nitride ( a − SiN x : H )
dc.title.alternativePhys. Rev. Materialsen_US
dc.typeArticle de revueen_US
dc.identifier.doi10.1103/PhysRevMaterials.5.035604en_US
dc.subject.halSciences de l'ingénieur [physics]/Mécanique [physics.med-ph]en_US
bordeaux.journalPhysical Review Materialsen_US
bordeaux.page35604en_US
bordeaux.volume5en_US
bordeaux.hal.laboratoriesLaboratoire des Composites Thermo Structuraux (LCTS) - UMR 5801en_US
bordeaux.issue3en_US
bordeaux.institutionUniversité de Bordeauxen_US
bordeaux.institutionCNRSen_US
bordeaux.institutionCEAen_US
bordeaux.peerReviewedouien_US
bordeaux.inpressnonen_US
hal.identifierhal-03188173
hal.version1
hal.date.transferred2021-11-18T11:15:05Z
hal.exporttrue
dc.rights.ccCC BYen_US
bordeaux.COinSctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Physical%20Review%20Materials&rft.date=2021&rft.volume=5&rft.issue=3&rft.spage=35604&rft.epage=35604&rft.eissn=2475-9953&rft.issn=2475-9953&rft.au=BRAUN,%20Jeffrey%20L.&KING,%20Sean%20W.&HOGLUND,%20Eric%20R.&GHARACHEH,%20Mehrdad%20Abbasi&SCOTT,%20Ethan%20A.&rft.genre=article


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