Mostrar el registro sencillo del ítem

Synthesis and optimization of low-pressure chemical vapor deposition-silicon nitride coatings deposited from SiHCl 3 and NH 3

dc.rights.licenseopenen_US
hal.structure.identifierLaboratoire des Composites Thermostructuraux [LCTS]
dc.contributor.authorCOSSOU, B.
hal.structure.identifierLaboratoire des Composites Thermostructuraux [LCTS]
dc.contributor.authorJACQUES, Sylvain
hal.structure.identifierLaboratoire des Composites Thermostructuraux [LCTS]
dc.contributor.authorCOUÉGNAT, G.
dc.contributor.authorKING, S. W.
dc.contributor.authorLI, L.
dc.contributor.authorLANFORD, W. A.
dc.contributor.authorBHATTARAI, G.
dc.contributor.authorPAQUETTE, M.
hal.structure.identifierLaboratoire des Composites Thermostructuraux [LCTS]
dc.contributor.authorCHOLLON, Georges
dc.date.accessioned2021-09-06T08:24:54Z
dc.date.available2021-09-06T08:24:54Z
dc.date.issued2019
dc.identifier.urihttps://oskar-bordeaux.fr/handle/20.500.12278/112088
dc.description.abstractEnStoichiometric silicon nitride films were deposited by low-pressure chemical vapor deposition from the SiHCl3-NH3-H2-Ar system in a hot wall reactor at pressures ranging from 0.3 to 2 kPa. The films are amorphous for deposition temperatures up to 1000 °C and crystalline, in the α-form, at 1200 °C and above. A method for evaluating the internal stresses based on the curvature of the silicon substrate wafer and the resulting silicon Raman peak shift was developed. Some amorphous films exhibit high internal tensile stresses that can lead to cracking during deposition depending on the mechanism and effective precursors involved. Residual stresses can thus be reduced and cracking avoided by, in descending order of importance, reducing the concentration of reactive gases through dilution, increasing the deposition temperature and decreasing the total pressure. The effects of these parameters on the intrinsic stresses were related to the amount of residual hydrogen successively incorporated and thermally released during the growth of the coating according to the Noskov's model.
dc.language.isoENen_US
dc.title.enSynthesis and optimization of low-pressure chemical vapor deposition-silicon nitride coatings deposited from SiHCl 3 and NH 3
dc.typeArticle de revueen_US
dc.identifier.doi10.1016/j.tsf.2019.04.045en_US
dc.subject.halChimie/Matériauxen_US
bordeaux.journalThin Solid Filmsen_US
bordeaux.page47-57en_US
bordeaux.volume681en_US
bordeaux.hal.laboratoriesLaboratoire des Composites Thermo Structuraux (LCTS) - UMR 5801en_US
bordeaux.institutionUniversité de Bordeauxen_US
bordeaux.institutionCNRSen_US
bordeaux.institutionCEAen_US
bordeaux.peerReviewedouien_US
bordeaux.inpressnonen_US
hal.identifierhal-02334052
hal.exportfalse
dc.rights.ccPas de Licence CCen_US
bordeaux.COinSctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Thin%20Solid%20Films&rft.date=2019&rft.volume=681&rft.spage=47-57&rft.epage=47-57&rft.au=COSSOU,%20B.&JACQUES,%20Sylvain&COU%C3%89GNAT,%20G.&KING,%20S.%20W.&LI,%20L.&rft.genre=article


Archivos en el ítem

ArchivosTamañoFormatoVer

No hay archivos asociados a este ítem.

Este ítem aparece en la(s) siguiente(s) colección(ones)

Mostrar el registro sencillo del ítem