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Thermal characterization of the SiO2-Ge2Sb2Te5 interface from room temperature up to 400 °C

hal.structure.identifierInstitut de Mécanique et d'Ingénierie de Bordeaux [I2M]
dc.contributor.authorBATTAGLIA, Jean-Luc
IDREF: 084712562
hal.structure.identifierInstitut de Mécanique et d'Ingénierie de Bordeaux [I2M]
dc.contributor.authorKUSIAK, Andrzej
IDREF: 084712899
hal.structure.identifierInstitut de Mécanique et d'Ingénierie de Bordeaux [I2M]
dc.contributor.authorSCHICK, Vincent
hal.structure.identifierInstitut de Mécanique et d'Ingénierie de Bordeaux [I2M]
dc.contributor.authorCAPPELLA, Andrea
hal.structure.identifierIstituto per la Microelettronica e Microsistemi [Catania] [IMM]
dc.contributor.authorWIEMER, Claudia
hal.structure.identifierIstituto per la Microelettronica e Microsistemi [Catania] [IMM]
dc.contributor.authorLONGO, Massimo
hal.structure.identifierR&D Technology Development [Numonyx]
dc.contributor.authorVARESI, Enrico
dc.date.accessioned2021-05-14T10:04:25Z
dc.date.available2021-05-14T10:04:25Z
dc.date.issued2010-02-24
dc.identifier.issn0508-3443
dc.identifier.urihttps://oskar-bordeaux.fr/handle/20.500.12278/78482
dc.description.abstractEnThe thermal conductivity of Ge2Sb2Te5 (GST) layers, as well as the thermal boundary resistance at the interface between the GST and amorphous SiO2, was measured using a photothermal radiometry experiment. The two phase changes in the Ge2Sb2Te5 were retrieved, starting from the amorphous and sweeping to the face centered cubic (fcc) crystalline state at 130 °C and then to the hexagonal crystalline phase (hcp) at 310 °C. The thermal conductivity resulted to be constant in the amorphous phase, whereas it evolved between the two crystalline states. The thermal boundary resistance at the GST-SiO2 interface was estimated to be higher for the hcp phase than for the amorphous and fcc ones.
dc.language.isoen
dc.publisherInstitute of Physics (IOP)
dc.title.enThermal characterization of the SiO2-Ge2Sb2Te5 interface from room temperature up to 400 °C
dc.typeArticle de revue
dc.identifier.doi10.1063/1.3284084
dc.subject.halPhysique [physics]/Mécanique [physics]/Thermique [physics.class-ph]
dc.subject.halSciences de l'ingénieur [physics]/Mécanique [physics.med-ph]/Thermique [physics.class-ph]
dc.subject.halPhysique [physics]/Physique [physics]/Physique Classique [physics.class-ph]
bordeaux.journalBritish Journal of Applied Physics
bordeaux.pagedoi:10.1063/1.3284084
bordeaux.volume107
bordeaux.hal.laboratoriesInstitut de Mécanique et d’Ingénierie de Bordeaux (I2M) - UMR 5295*
bordeaux.issue4
bordeaux.institutionUniversité de Bordeaux
bordeaux.institutionBordeaux INP
bordeaux.institutionCNRS
bordeaux.institutionINRAE
bordeaux.institutionArts et Métiers
bordeaux.peerReviewedoui
hal.identifierhal-00740147
hal.version1
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-00740147v1
bordeaux.COinSctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=British%20Journal%20of%20Applied%20Physics&rft.date=2010-02-24&rft.volume=107&rft.issue=4&rft.spage=doi:10.1063/1.3284084&rft.epage=doi:10.1063/1.3284084&rft.eissn=0508-3443&rft.issn=0508-3443&rft.au=BATTAGLIA,%20Jean-Luc&KUSIAK,%20Andrzej&SCHICK,%20Vincent&CAPPELLA,%20Andrea&WIEMER,%20Claudia&rft.genre=article


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