Thermal characterization of the SiO2-Ge2Sb2Te5 interface from room temperature up to 400 °C
Language
en
Article de revue
This item was published in
British Journal of Applied Physics. 2010-02-24, vol. 107, n° 4, p. doi:10.1063/1.3284084
Institute of Physics (IOP)
English Abstract
The thermal conductivity of Ge2Sb2Te5 (GST) layers, as well as the thermal boundary resistance at the interface between the GST and amorphous SiO2, was measured using a photothermal radiometry experiment. The two phase ...Read more >
The thermal conductivity of Ge2Sb2Te5 (GST) layers, as well as the thermal boundary resistance at the interface between the GST and amorphous SiO2, was measured using a photothermal radiometry experiment. The two phase changes in the Ge2Sb2Te5 were retrieved, starting from the amorphous and sweeping to the face centered cubic (fcc) crystalline state at 130 °C and then to the hexagonal crystalline phase (hcp) at 310 °C. The thermal conductivity resulted to be constant in the amorphous phase, whereas it evolved between the two crystalline states. The thermal boundary resistance at the GST-SiO2 interface was estimated to be higher for the hcp phase than for the amorphous and fcc ones.Read less <
Origin
Hal imported