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hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorURIEN, Mathieu
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorHIRSCH, Lionel
IDREF: 111272459
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorWANTZ, Guillaume
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorTARDY, Pascal
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorVIGNAU, Laurence
hal.structure.identifierLaboratoire de l'intégration, du matériau au système [IMS]
dc.contributor.authorPARNEIX, Jean-Paul
hal.structure.identifierLaboratoire de Chimie des polymères organiques [LCPO]
hal.structure.identifierTeam 4 LCPO : Polymer Materials for Electronic, Energy, Information and Communication Technologies
dc.contributor.authorCLOUTET, Eric
IDREF: 151048681
hal.structure.identifierLaboratoire de Chimie des polymères organiques [LCPO]
hal.structure.identifierTeam 2 LCPO : Biopolymers & Bio-sourced Polymers
dc.contributor.authorCRAMAIL, Henri
dc.date.accessioned2020
dc.date.available2020
dc.date.issued2007
dc.identifier.urihttps://oskar-bordeaux.fr/handle/20.500.12278/20856
dc.description.abstractEnOrganic field-effect transistors (OFETs) based on regioregular poly(3-hexylthiophene)s (P3HT)s have been studied as a function of the amount of impurities in the active polymer. P3HTs have been synthesized via a nickel-initiated cross-coupling polymerization and successively purified by a series of Soxhlet extractions with methanol, hexane and chloroform. At each stage, the amount of impurities was quantified by means of 1H nuclear magnetic resonance (NMR) spectroscopy, Rutherford backscattering spectroscopy (RBS) and particle induced X-ray emissions (PIXE). Traces of Ni, Cl, Mg, Ca, Fe and Zn could be detected in non-fully purified P3HTs. The presence of impurities in the different fractions of P3HT is shown to affect not only the characteristics of the OFETs but also the photovoltaic performances.
dc.language.isoen
dc.subject.enNuclear analysis
dc.subject.enPolythiophene
dc.subject.enPurity
dc.subject.enField-effect transistor
dc.title.enField-effect transistors based on poly(3-hexylthiophene): effect of impurities
dc.typeArticle de revue
dc.identifier.doi10.1016/j.orgel.2007.06.003
dc.subject.halSciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique
bordeaux.journalOrganic Electronic
bordeaux.page727-734
bordeaux.volume8
bordeaux.hal.laboratoriesLaboratoire de Chimie des Polymères Organiques (LCPO) - UMR 5629*
bordeaux.institutionBordeaux INP
bordeaux.institutionUniversité de Bordeaux
bordeaux.peerReviewedoui
hal.identifierhal-00162206
hal.version1
hal.origin.linkhttps://hal.archives-ouvertes.fr//hal-00162206v1
bordeaux.COinSctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.jtitle=Organic%20Electronic&rft.date=2007&rft.volume=8&rft.spage=727-734&rft.epage=727-734&rft.au=URIEN,%20Mathieu&HIRSCH,%20Lionel&WANTZ,%20Guillaume&TARDY,%20Pascal&VIGNAU,%20Laurence&rft.genre=article


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