DC and RF aging test of AlGaN/GaN HEMT technology on SiC substrate
Language
EN
Article de revue
This item was published in
Microelectronics Reliability. 2025-07, vol. 170, p. 115772
English Abstract
This article focuses on the comprehensive evaluation of performance and robustness in microwave AlGaN/GaN HEMTs. The study investigates whether the degradation mechanisms observed during DC aging test align with those ...Read more >
This article focuses on the comprehensive evaluation of performance and robustness in microwave AlGaN/GaN HEMTs. The study investigates whether the degradation mechanisms observed during DC aging test align with those observed during RF aging test. A time-domain load-pull setup (1.8 GHz – 18 GHz) is utilized to measure key parameters during RF stresses and characterize the devices, highlighting key differences in degradation mechanisms between RF and DC aging tests. These findings shed light on the behavior of HEMTs when subjected to a RF signal, emphasizing the necessity of comprehensive analysis for ensuring device reliability in practical scenarios.Read less <